Browsing by author "He, Liang"
Now showing items 1-8 of 8
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Are extended defects a show stopper for future III-V CMOS technologies?
Claeys, Cor; Hsu, Brent; He, Liang; Mols, Yves; Kunert, Bernardette; Langer, Robert; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Simoen, Eddy (2018-06) -
Deep traps in In0.3Ga0.7As nFinFETs, studied by generation-recombination noise
He, Liang; Chen, H.; Guo, D.D.; Hu, L.N.; Qin, Y.; Simoen, Eddy; Claeys, Cor; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2017) -
Do we have to worry about extended defects in high-mobility materials?
Simoen, Eddy; Hsu, Brent; He, Liang; Mols, Yves; Kunert, Bernardette; Langer, Robert; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Claeys, Cor (2018) -
Gate metal and cap layer effects on Ge nMOSFETs low frequency noise behavior
He, Liang; Zhao, Pan; Liu, Jiahao; Su, Yahui; Chen, Hua; Jia, Xiaofei; Arimura, Hiroaki; Mitard, Jerome; Witters, Liesbeth; Horiguchi, Naoto; Collaert, Nadine; Claeys, Cor; Simoen, Eddy (2019-12) -
Impact of the metal gate on the oxide stack quality assessed by low-frequency noise
Simoen, Eddy; He, Liang; O'Sullivan, Barry; Veloso, Anabela; Horiguchi, Naoto; Collaert, Nadine; Claeys, Cor (2017) -
Low frequency noise analysis of impact of metal gate Processing on the gate oxide stack quality
Claeys, Cor; He, Liang; O'Sullivan, Barry; Veloso, Anabela; Horiguchi, Naoto; Collaert, Nadine; Simoen, Eddy (2018) -
Low frequency noise characterization of 22nm PMOS featuring with filling W gate using different precursors
He, Liang; Simoen, Eddy; Claeys, Cor; Wang, Guilei; Luo, Jun; Zhao, Chao; Li, Junfeng; Chen, Hua; Hu, Yin; Qin, Xiaoting (2017) -
RTS Noise Characterization of Trap Properties in InGaAs nFinFETs
Xiao, Xiaolei; He, Liang; Chen, Hua; Wang, Xianyu; Simoen, Eddy; Claeys, Cor (2023)