Browsing by author "Rooyackers, Rita"
Now showing items 21-40 of 277
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Analog design with Line-TFET device experimental data: from device to circuit level
Filho, Walter G.; Simoen, Eddy; Rooyackers, Rita; Claeys, Cor; Collaert, Nadine; Martino, Joao; Agopian, Paula GD (2020) -
Analog parameters of solid source Zn diffusion InXGa1-XAs nTFETs down to 10K
Mendes Bordallo, Caio Cesar; Martino, Joao Antonio; Agopian, Paula Ghedini; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Smets, Quentin; Simoen, Eddy; Claeys, Cor; Collaert, Nadine (2016) -
Analog performance of standard and strained triple-gate nFINFETS
Pavanello, M.A.; Martino, J.A.; Simoen, Eddy; Rooyackers, Rita; Collaert, Nadine; Claeys, Cor (2008) -
Analog performance of vertical nanowireTFETs as a function of temperature and transport mechanism
Dalle Valle Martino, Marcio; Neves Souza, Felipe; Ghedini der Agopian, Paula; Martino, Joao Antonio; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2015) -
Analysis and optimisation of the 2D-dopant profile in a 90 nm CMOS technology using scanning spreading resistance microscopy
Eyben, Pierre; Alvarez, David; Jurczak, Gosia; Rooyackers, Rita; De Keersgieter, An; Augendre, Emmanuel; Vandervorst, Wilfried (2003) -
Analysis of analog parameters on in NW-TFETs with Si and SiGe source composition for at high temperatures
Bordallo, Caio; Martino, Joao A.; Agopian, Paula; Rooyackers, Rita; Vandooren, Anne; Thean, Aaron; Simoen, Eddy; Claeys, Cor (2015) -
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
Martino, Marcio D.V.; Martino, Joao A.; Agopian, Paula G.D.; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Claeys, Cor (2017) -
Analysis of standard and strained FinFET operation in source-follower buffer configuration
Pavanello, M.A.; Martino, J.A.; Simoen, Eddy; Rooyackers, Rita; Collaert, Nadine; Claeys, Cor (2009) -
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures
Bordallo, Caio; Martino, J.A.; Agopian, P.G.D.; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Simoen, Eddy; Claeys, Cor; Collaert, Nadine (2017) -
Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopy
Eyben, Pierre; Alvarez, David; Jurczak, Gosia; Rooyackers, Rita; De Keersgieter, An; Augendre, Emmanuel; Vandervorst, Wilfried (2004-01) -
Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction tunnel-FETs
Vandooren, Anne; Rooyackers, Rita; Leonelli, Daniele; Hikavyy, Andriy; Devriendt, Katia; Demand, Marc; Loo, Roger; Groeseneken, Guido; Huyghebaert, Cedric (2013) -
Application of HCl etch in the production of novel devices
Hikavyy, Andriy; Rooyackers, Rita; Verheyen, Peter; Vellianitis, Georgios; Van Dal, Mark; Lander, Rob; Loo, Roger; Caymax, Matty (2008) -
Application of HCl gas phase etch in the production of novel devices
Hikavyy, Andriy; Rooyackers, Rita; Verheyen, Peter; Leys, Frederik; Vellianitis, Georgios; Van Dal, Mark; Lander, Rob; Loo, Roger (2008-05) -
Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
Pelaz, L.; Duffy, Ray; Aboy, M.; Marques, L.; Lopez, P.; Santos, I.; Pawlak, Bartek; Van Dal, Mark; Duriez, Blandine; Merelle, Thomas; Doornbos, Gerben; Collaert, Nadine; Witters, Liesbeth; Rooyackers, Rita; Vandervorst, Wilfried; Jurczak, Gosia; Kaiser, M.; Weemaes, R.; Van Berkum, J.; Breimer, P.; Lander, Rob (2008) -
Back bias influence on analog performance of pTFET
Agopian, P.G.D.; Neves, F.S.; Martino, J.A.; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Claeys, Cor (2013) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
Boosting the on-current of Si-based tunnel field-effect transistors
Verhulst, Anne; Vandenberghe, William; Leonelli, Daniele; Rooyackers, Rita; Vandooren, Anne; Pourtois, Geoffrey; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2010) -
Boosting the on-current of Si-based tunnel field-effect transistors
Verhulst, Anne; Vandenberghe, William; Leonelli, Daniele; Rooyackers, Rita; Vandooren, Anne; Pourtois, Geoffrey; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2010) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Kubicek, Stefan; Rooyackers, Rita; Kim, Min-Soo; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Delande, Tinne; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2012) -
Capping-metal gate integration technology for multiple-VT CMOS in MuGFETs
Veloso, Anabela; Witters, Liesbeth; Demand, Marc; Ferain, Isabelle; Son, Nak Jin; Kaczer, Ben; Roussel, Philippe; Adelmann, Christoph; Brus, Stephan; Richard, Olivier; Bender, Hugo; Conard, Thierry; Vos, Rita; Rooyackers, Rita; Van Elshocht, Sven; Collaert, Nadine; De Meyer, Kristin; Biesemans, Serge; Jurczak, Malgorzata (2008)