Browsing by author "Vaisman Chasin, Adrian"
Now showing items 21-40 of 136
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Capacitor-less, Long-Retention (> 400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM
Belmonte, Attilio; Oh, Hyungrock; Rassoul, Nouredine; Donadio, Gabriele Luca; Mitard, Jerome; Dekkers, Harold; Delhougne, Romain; Subhechha, Subhali; Vaisman Chasin, Adrian; van Setten, Michiel; Kljucar, Luka; Mao, Ming; Puliyalil, Harinarayanan; Pak, Murat; Teugels, Lieve; Tsvetanova, Diana; Banerjee, Kaustuv; Souriau, Laurent; Tokei, Zsolt; Goux, Ludovic; Kar, Gouri Sankar (2020) -
Characterizing and Modelling of the BTI Reliability in IGZO-TFT using Light-assisted I-V Spectroscopy
Wu, Zhicheng; Vaisman Chasin, Adrian; Franco, Jacopo; Subhechha, Subhali; Dekkers, Harold; Yengula Venkata Ramana, Bhuvaneshwari; Belmonte, Attilio; Rassoul, Nouredine; van Setten, Michiel; Afanas'ev, V.; Delhougne, Romain; Kaczer, Ben; Kar, Gouri Sankar (2022) -
Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
Tyaginov, Stanislav; Bury, Erik; Grill, Alexander; Yu, Zhuoqing; Makarov, Alexander; De Keersgieter, An; Vexler, Mikhail; Vandemaele, Michiel; Wang, Runsheng; Spessot, Alessio; Vaisman Chasin, Adrian; Kaczer, Ben (2023) -
Comparative study of source-drain contact metals for amorphous InGaZnO thin-film transistors
Nag, Manoj; Bhoolokam, Ajay; Steudel, Soeren; Vaisman Chasin, Adrian; Groeseneken, Guido; Heremans, Paul (2014) -
Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond
Ritzenthaler, Romain; Mertens, Hans; Eneman, Geert; Simoen, Eddy; Bury, Erik; Eyben, Pierre; Bufler, Fabian; Oniki, Yusuke; Briggs, Basoene; Chan, BT; Hikavyy, Andriy; Mannaert, Geert; Parvais, Bertrand; Vaisman Chasin, Adrian; Mitard, Jerome; Dentoni Litta, Eugenio; Samavedam, Sri; Horiguchi, Naoto (2021) -
Complete degradation mapping of stacked gate-all-around Si nanowire transistors considering both intrinsic and extrinsic effects
Vaisman Chasin, Adrian; Bury, Erik; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Ritzenthaler, Romain; Mertens, Hans; Horiguchi, Naoto; Linten, Dimitri; Mocuta, Anda (2017) -
Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search
van Setten, Michiel; Dekkers, Harold; Pashartis, Christopher; Vaisman Chasin, Adrian; Belmonte, Attilio; Delhougne, Romain; Kar, Gouri Sankar; Pourtois, Geoffrey (2022) -
Conduction and Breakdown Mechanisms in Low-k Spacer and Nitride Spacer Dielectric Stacks in Middle of Line Interconnects
Wu, C.; Vaisman Chasin, Adrian; Demuynck, Steven; Horiguchi, Naoto; Croes, Kristof (2020) -
Cyclic Thermal Effects on Devices of Two-Dimensional Layered Semiconducting Materials
Kim, Yeonsu; Kaczer, Ben; Verreck, Devin; Grill, Alexander; Kim, Doyoon; Song, Jaeick; Diaz Fortuny, Javier; Vici, Andrea; Park, Jongseon; Van Beek, Simon; Simicic, Marko; Bury, Erik; Vaisman Chasin, Adrian; Linten, Dimitri; Lee, Jaewoo; Chun, Jungu; Kim, Seongji; Seo, Beumgeun; Choi, Junhee; Shim, Joon Hyung; Lee, Kookjin; Kim, Gyu-Tae (2021) -
Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications
Lee, Kookjin; Ji, Hyunjin; Kim, Yanghee; Kaczer, Ben; Lee, Hyebin; Ahn, Jae-Pyoung; Choi, Junhee; Grill, Alexander; Panarella, Luca; Smets, Quentin; Verreck, Devin; Van Beek, Simon; Vaisman Chasin, Adrian; Linten, Dimitri; Na, Junhong; Lee, Jae Woo; De Wolf, Ingrid; Kim, Gyu-Tae (2022) -
Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode
Vaisman Chasin, Adrian; Simoen, Eddy; Nag, Manoj; Bhoolokam, Ajay; Genoe, Jan; Gielen, Georges; Heremans, Paul (2014) -
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI
Rinaudo, Pietro; Vaisman Chasin, Adrian; Franco, Jacopo; Wu, Zhicheng; Subhechha, Subhali; Arutchelvan, Goutham; Eneman, Geert; Yengula Venkata Ramana, Bhuvaneshwari; Rassoul, Nouredine; Delhougne, Romain; Kaczer, Ben; De Wolf, Ingrid; Kar, Gouri Sankar (2023) -
Degradation mapping of IGZO TFTs
Rinaudo, P.; Vaisman Chasin, Adrian; Franco, Jacopo; Wu, Zhicheng; Rassoul, Nouredine; Delhougne, Romain; Kaczer, Ben; De Wolf, Ingrid; Kar, Gouri Sankar (2022) -
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors
Ravsher, Taras; Fantini, Andrea; Vaisman Chasin, Adrian; Houshmand Sharifi, Shamin; Hody, Hubert; Dekkers, Harold; Witters, Thomas; Van Houdt, Jan; Afanas'ev, Valeri; Couet, Sebastien; Kar, Gouri Sankar (2022) -
Deposition, Characterization, and Performance of Spinel InGaZnO4
Dekkers, Harold; van Setten, Michiel; Belmonte, Attilio; Vaisman Chasin, Adrian; Subhechha, Subhali; Rassoul, Nouredine; Glushkova, Anastasia; Delhougne, Romain; Kar, Gouri Sankar (2022-02-23) -
Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control
Subhechha, Subhali; Rassoul, Nouredine; Belmonte, Attilio; Hody, Hubert; Dekkers, Harold; van Setten, Michiel; Vaisman Chasin, Adrian; Houshmand Sharifi, Shamin; Banerjee, Kaustuv; Puliyalil, Harinarayanan; Kundu, Souvik; Pak, Murat; Tsvetanova, Diana; Bazzazian, Nina; Vandersmissen, Kevin; Batuk, Dmitry; Geypen, Jef; Heijlen, Jeroen; Delhougne, Romain; Kar, Gouri Sankar (2022) -
Distribution function based simulations of hot-carrier degradation in nanowire FETs
Vandemaele, Michiel; Kaczer, Ben; Stanojevic, Zlatan; Tyaginov, Stanislav; Makarov, Alexander; Vaisman Chasin, Adrian; Mertens, Hans; Linten, Dimitri; Groeseneken, Guido (2018) -
Efficient physical defect model applied to PBTI in high-k stacks
Rzepa, G.; Franco, Jacopo; Subirats, Alexandre; Jech, M.; Vaisman Chasin, Adrian; Grill, A.; Waltl, M.; Knobloch, T.; Stampfer, B.; Chiarella, Thomas; Horiguchi, Naoto; Ragnarsson, Lars-Ake; Linten, Dimitri; Grasser, T.; Kaczer, Ben (2017) -
Enabling Logic with Backside Connectivity via n-TSVs and its Potential as a Scaling Booster
Veloso, Anabela; Jourdain, Anne; Hiblot, Gaspard; Schleicher, Filip; D'have, Koen; Sebaai, Farid; Radisic, Dunja; Loo, Roger; Hopf, Toby; De Keersgieter, An; Arimura, Hiroaki; Eneman, Geert; Favia, Paola; Geypen, Jef; Arutchelvan, Goutham; Vaisman Chasin, Adrian; Jang, Doyoung; Nyns, Laura; Rosseel, Erik; Hikavyy, Andriy; Mannaert, Geert; Chan, BT; Devriendt, Katia; Demuynck, Steven; Van der Plas, Geert; Ryckaert, Julien; Beyer, Gerald; Dentoni Litta, Eugenio; Beyne, Eric; Horiguchi, Naoto (2021) -
Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets
Bury, Erik; Vaisman Chasin, Adrian; Kaczer, Ben; Vandemaele, M.; Tyaginov, S.; Franco, Jacopo; Ritzenthaler, Romain; Mertens, Hans; Weckx, Pieter; Horiguchi, Naoto; Linten, Dimitri (2022)