Browsing by author "Redolfi, Augusto"
Now showing items 21-40 of 110
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Cu pumping in TSVs: Effect of pre-CMP thermal budget
De Wolf, Ingrid; Croes, Kristof; Varela Pedreira, Olalla; Labie, Riet; Redolfi, Augusto; Van De Peer, Myriam; Vanstreels, Kris; Okoro, Chukwudi; Vandevelde, Bart; Beyne, Eric (2011) -
Doped Gd-O based RRAM for embedded application
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2016) -
Dry etch of bulk Si FinFET structures with tunable CD
Devriendt, Katia; Redolfi, Augusto; Shamiryan, Denis; Boullart, Werner (2009) -
Dry etching process for bulk finFET manufacturing
Shamiryan, Denis; Redolfi, Augusto; Boullart, Werner (2009) -
Effect of inductively coupled electro-magnetic field on bottom oxide etch in a high aspect ratio trench
Sardo, Stefano; Palombizio, Antonio; Redolfi, Augusto; Mannarino, Manuel (2020) -
Effect of inductively coupled electro-magnetic field on bottom oxide etch in a high aspect ratio trench
Sardo, Stefano; Palombizio, Antonio; Redolfi, Augusto; Mannarino, Manuel; Haspeslagh, Luc (2020) -
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices
Reale, G.; Belmonte, Attilio; Fantini, Andrea; Radhakrishnan, Janaki; Redolfi, Augusto; Devulder, Wouter; Nyns, Laura; Kundu, Shreya; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2021) -
Effect of TSV presence on FEOL yield and reliability
Kauerauf, Thomas; Branka, Anna; Croes, Kristof; Redolfi, Augusto; Civale, Yann; Torregiani, Cristina; Groeseneken, Guido; Beyne, Eric (2013) -
Electrical characterization method to study barrier integrity in 3D through-silicon vias
Li, Yunlong; Velenis, Dimitrios; Kauerauf, Thomas; Stucchi, Michele; Civale, Yann; Redolfi, Augusto; Croes, Kristof (2012) -
Elevated co-silicide for sub-100nm high performance and RF CMOS
Jurczak, Gosia; de Potter de ten Broeck, Muriel; Rooyackers, Rita; Jeamsaksiri, Wutthinan; Redolfi, Augusto; Grau, Lluis; Lauwers, Anne; Lindsay, Richard; Peytier, Ivan; Augendre, Emmanuel; Badenes, Gonçal (2002) -
Endurance failure mechanisms in TiN\Ta2O5\Ta RRAM stack
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Chen, Yangyin; Groeseneken, Guido; Jurczak, Gosia (2015) -
Engineering and stack optimization of Cu-based selector devices for low power SCM applications
Barci, Marinela; Fantini, Andrea; Redolfi, Augusto; Kundu, Shreya; Devulder, Wouter; Opsomer, Karl; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar; Witters, Thomas (2018) -
Engineering of a TiN\Al2O3\(Hf,Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Degraeve, Robin; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2015) -
Engineering of Hf1-xAlxOy amorphous dielectrics for high-performance RRAM applications
Fantini, Andrea; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Adelmann, Christoph; Polimeni, Giuseppe; Chen, Yangyin; Komura, Masanori; Belmonte, Attilio; Wouters, Dirk; Jurczak, Gosia (2014) -
Enhanced barrier seed metallization for integration of high-density high aspect-ratio copper-filled 3D through-Silicon Via Interconnects
Civale, Yann; Armini, Silvia; Philipsen, Harold; Redolfi, Augusto; Velenis, Dimitrios; Croes, Kristof; Heylen, Nancy; El-Mekki, Zaid; Vandersmissen, Kevin; Beyer, Gerald; Swinnen, Bart; Beyne, Eric (2012) -
Enhancement of CBRAM performance by controlled formation of a hourglass shaped filament
Belmonte, Attilio; Goux, Ludovic; Woo, Jiyong; Celano, Umberto; Redolfi, Augusto; Clima, Sergiu; Kar, Gouri Sankar (2017) -
Evidences of electrode-controlled retention properties in Ta2O5-based resistive-switching memory cells
Goux, Ludovic; Fantini, Andrea; Chen, Yangyin; Redolfi, Augusto; Degraeve, Robin; Jurczak, Gosia (2014) -
Excellent Roff/Ron ratio and short programming time in Cu/Al2O3-based conductive-bridge RAM under low-current (10μA) operation
Belmonte, Attilio; Fantini, Andrea; Degraeve, Robin; Redolfi, Augusto; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2015) -
Fast and stable sub-10μA pulse operation in W/SiO2/Ta/Cu 90nm 1T1R CBRAM
Belmonte, Attilio; Fantini, Andrea; Degraeve, Robin; Celano, Umberto; Vandervorst, Wilfried; Redolfi, Augusto; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2015) -
FinFETs and their futures
Horiguchi, Naoto; Parvais, Bertrand; Chiarella, Thomas; Collaert, Nadine; Veloso, Anabela; Rooyackers, Rita; Verheyen, Peter; Witters, Liesbeth; Redolfi, Augusto; De Keersgieter, An; Brus, Stephan; Zschaetzsch, Gerd; Ercken, Monique; Altamirano Sanchez, Efrain; Locorotondo, Sabrina; Demand, Marc; Jurczak, Gosia; Vandervorst, Wilfried; Hoffmann, Thomas Y.; Biesemans, Serge (2011)