Browsing by author "Vincent, Benjamin"
Now showing items 21-40 of 122
-
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Gencarelli, Federica; Vincent, Benjamin; Demeulemeester, Jelle; Vantomme, Andre; Moussa, Alain; Franquet, Alexis; Kumar, Arul; Bender, Hugo; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2013) -
CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices
Vincent, Benjamin; Gencarelli, Federica; Kumar, Arul; Vantomme, Andre; Merckling, Clement; Lin, Dennis; Afanasiev, Valeri; Eneman, Geert; Clarysse, Trudo; Firrincieli, Andrea; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Deep-level transient spectroscopy of MOS capacitors on GeSn epitaxial layers
Simoen, Eddy; Vincent, Benjamin; Merckling, Clement; Gencarelli, Federica; Chu, L-K; Loo, Roger (2012) -
Electrical characterization of Ge-pFETs with HfO2/TiN metal gate: review of possible defects impacting the hole mobility
Mitard, Jerome; Vincent, Benjamin; De Jaeger, Brice; Krom, Raymond; Loo, Roger; Eneman, Geert; De Meyer, Kristin; Meuris, Marc; Heyns, Marc; Vandervorst, Wilfried; Caymax, Matty; Hoffmann, Thomas Y. (2010) -
Electrical characterization of Si capped Hf)2/metal gate Ge-pFETs: physical insight into critical parameters
Mitard, Jerome; Vincent, Benjamin; De Jaeger, Brice; Martens, Koen; Krom, Raymond; Loo, Roger; Eneman, Geert; De Meyer, Kristin; Meuris, Marc; Heyns, Marc; Vandervorst, Wilfried; Caymax, Matty; Hoffmann, Thomas Y. (2010) -
Epitaxial growth challenges for advanced CMOS devices
Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin; Witters, Liesbeth; Eneman, Geert; Mitard, Jerome; Rooyackers, Rita; Vandooren, Anne; Vandervorst, Wilfried; Thean, Aaron (2013) -
Epitaxial growth in advanced MOS devices: challenges and solutions
Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin; Gencarelli, Federica; Witters, Liesbeth; Mitard, Jerome; Hellings, Geert; Sioncke, Sonja; Caymax, Matty; Bender, Hugo; Simoen, Eddy; Eneman, Geert; Vandervorst, Wilfried; Thean, Aaron (2012-05) -
Epitaxial growth in advanced SiGe and Ge MOS devices: challenges and solutions
Loo, Roger; Vincent, Benjamin; Hikavyy, Andriy; Gencarelli, Federica; Eneman, Geert; Witters, Liesbeth; Mitard, Jerome; Hellings, Geert; Sioncke, Sonja; Bender, Hugo; Eyben, Pierre; Caymax, Matty; Vandervorst, Wilfried; Thean, Aaron (2012-09) -
Epitaxial Si, SiGe and Ge for high-performance devices
Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin; Wang, Gang; Vanherle, Wendy; Gencarelli, Federica; Nguyen, Duy; Rosseel, Erik; Souriau, Laurent; Rondas, Dirk; Dekoster, Johan; Caymax, Matty (2010) -
EXAFS investigation of Sn local environment in strained and relaxed epitaxial Ge1xSnx films
Gencarelli, Federica; Grandjean, Didier; Shimura, Yosuke; Vincent, Benjamin; Banerjee, Dipanjan; Vantomme, Andre; Vandervorst, Wilfried; Loo, Roger; Heyns, Marc; Temst, Kristiaan (2015) -
EXAFS study of Sn local environment in strained and relaxed CVD grown epitaxial GeSn films
Gencarelli, Federica; Grandjean, Didier; Shimura, Yosuke; Vincent, Benjamin; Vantomme, Andre; Vandervorst, Wilfried; Loo, Roger; Heyns, Marc; Temst, Kristiaan (2013) -
Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1-xSnx films
Gencarelli, Federica; Grandjean, Didier; Shimura, Yosuke; Vincent, Benjamin; Banerjee, Dipanjan; Vantomme, Andre; Vandervorst, Wilfried; Loo, Roger; Heyns, Marc; Temst, Kristiaan (2015) -
First demonstration of strained Ge-in-STI IFQW pFETs featuring raised SiGe75% S/D, replacement metal gate and germanided local interconnects
Mitard, Jerome; Witters, Liesbeth; Vincent, Benjamin; Franco, Jacopo; Favia, Paola; Hikavyy, Andriy; Eneman, Geert; Loo, Roger; Brunco, David; Kabir, Nafees; Bender, Hugo; Sebaai, Farid; Vos, Rita; Mertens, Paul; Milenin, Alexey; Vecchio, Emma; Ragnarsson, Lars-Ake; Collaert, Nadine; Thean, Aaron (2013) -
Formation and characterization of Ni(Ge1-ySny)/Ge1-xSnx/Ge contacts
Nishimura, Tsuyoshi; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, Shigeaki (2010-09) -
Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, Shigeaki (2011) -
Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osaku; Zaima, Shigeaki (2010) -
Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osaku; Zaima, Shigeaki (2010) -
Formation of Ni(Ge1-ySny)/Ge1-xSnx/Ge contact for Ge1-xSnx source/drain Stressor
Nishimura, T.; Nakatsuka, O.; Shimura, Y.; Takeuchi, S.; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, S. (2010) -
Ge and GeSn chemical vapor deposition for Si based photonic devices
Vincent, Benjamin; Gencarelli, Federica; Vanherle, Wendy; Loo, Roger; Caymax, Matty; Van Campenhout, Joris (2011) -
Ge chemical vapor deposition on GaAs and In0.53Ga0.47As for low resistivity ohmic III-V nMOSFETs source/drain contacts
Vincent, Benjamin; Firrincieli, Andrea; Waldron, Niamh; Wang, W.-E.; Franquet, Alexis; Douhard, Bastien; Bender, Hugo; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty (2011)