Browsing by author "Langer, Robert"
Now showing items 21-40 of 83
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Epitaxial growth of Group IV semiconductors
Loo, Roger; Hikavyy, Andriy; Porret, Clément; Rosseel, Erik; Vohra, Anurag; Langer, Robert (2018-12) -
Epitaxial growth schemes for fin and Gate All Around devices
Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Porret, Clément; Vohra, Anurag; Langer, Robert (2017) -
Epitaxial growth schemes for fin and Gate All Around devices
Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Porret, Clément; Vohra, Anurag; Kohen, David; Margetis, Joe; Tolle, John; Langer, Robert (2018) -
Epitaxial growth schemes for Fin and Gate-All-Around devices
Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Porret, Clément; Vohra, Anurag; Kohen, David; Margetis, Joe; Tolle, John; Langer, Robert (2018-05) -
Epitaxial growth schemes for logic devices
Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Porret, Clément; Vohra, Anurag; Langer, Robert (2018) -
First demonstration of III-V HBTs on 300mm Si substrates using nanoridge technology
Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Sibaja-Hernandez, Arturo; Walke, Amey; Yu, Hao; Deshpande, Paru; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2019-12) -
First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETs
Capogreco, Elena; Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Eneman, Geert; Favia, Paola; Bender, Hugo; Wostyn, Kurt; Dentoni Litta, Eugenio; Schulze, Andreas; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018-11) -
First demonstration of vertically-stacked gate-all-around highly-strained germanium nanowire p-FETs
Capogreco, Elena; Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Eneman, Geert; Favia, Paola; Bender, Hugo; Wostyn, Kurt; Dentoni Litta, Eugenio; Schulze, Andreas; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018) -
Gaining an edge with nano-ridges
Kunert, Bernardette; Langer, Robert; Pantouvaki, Marianna; Van Campenhout, Joris; Van Thourhout, Dries (2018-07) -
GaN-on-SOI: Monolithically integrated all GaN ICs for power conversion
Li, Xiangdong; Amirifar, Nooshin; Geens, Karen; Zhao, Ming; Guo, Weiming; Liang, Hu; You, Shuzhen; Posthuma, Niels; De Jaeger, Brice; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Cosnier, Thibault; Langer, Robert; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Ge:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devices
Vohra, Anurag; Porret, Clément; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger (2018) -
Ge:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devices
Vohra, Anurag; Porret, Clément; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger (2019) -
Generation-recombination noise in advanced CMOS devices
Simoen, Eddy; Oliveira, Alberto; Boudier, Dimitri; Mitard, Jerome; Witters, Liesbeth; Veloso, Anabela; Agopian, Paula; Martino, Joao; Carin, Regis; Langer, Robert; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2016) -
GR-noise characterization of Ge pFinFETs with STI first and STI last process
Oliveira, Alberto V.; Simoen, Eddy; Mitard, Jerome; Agopian, Paula G.D.; Martino, Joao A; Langer, Robert; Witters, Liesbeth; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2016) -
Group IV Epi processing, evolution in CMOS from 90 to 10nm node
Loo, Roger; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Ike, Shinichi; Rondas, Dirk; Rosseel, Erik; Shimura, Yosuke; Steenbergen, Johnny; Sun, Jianwu; Wang, Wei; Langer, Robert (2014) -
Growth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPE
Liang, Hu; Saripalli, Yoga; Van Hove, Marleen; Kang, Xuanwu; Vrancken, Evi; Zhao, Ming; Kandaswamy, Prem Kumar; Decoutere, Stefaan; Langer, Robert (2014) -
High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-30 nm Lg
Capogreco, Elena; Arimura, Hiroaki; Vohra, Anurag; Porret, Clément; Loo, Roger; De Keersgieter, An; Dupuy, Emmanuel; Marinov, Daniil; Hikavyy, Andriy; Sebaai, Farid; Mannaert, Geert; Ragnarsson, Lars-Ake; Siew, Yong Kong; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Altamirano Sanchez, Efrain; Holsteyns, Frank; Demuynck, Steven; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine; Horiguchi, Naoto (2019) -
Highly doped low-temperature Si:P growth for source/drain formation in advanced Si nFETs
Rosseel, Erik; Kohen, David; Hikavyy, Andriy; Porret, Clément; Loo, Roger; Tolle, John; Vandooren, Anne; Veloso, Anabela; Collaert, Nadine; Mocuta, Dan; Langer, Robert (2017) -
How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
Kunert, Bernardette; Mols, Yves; Baryshnikova, Marina; Waldron, Niamh; Schulze, Andreas; Langer, Robert (2018) -
III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance
Vais, Abhitosh; Yadav, Sachin; Mols, Yves; Vermeersch, Bjorn; Vondkar Kodandarama, Komal; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Boccardi, Guillaume; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Collaert, Nadine (2022)