Browsing by author "Vanhaeren, Danielle"
Now showing items 21-40 of 50
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In-depth characterization of WSe2 monolayers grown by GSMBE
Mortelmans, Wouter; El Kazzi, Salim; Nuytten, Thomas; Crahaij, Steven; Meersschaut, Johan; Vanhaeren, Danielle; Landeloos, Lien; Conard, Thierry; Hoflijk, Ilse; Bender, Hugo; Merckling, Clement; Heyns, Marc (2017) -
Interplay between statistical variability and reliability in contemporary p-MOSFETs: measurements vs. simulated
Hussin, Razaidi; Amoroso, Salvatore; Gerrer, Louis; Kaczer, Ben; Weckx, Pieter; Franco, Jacopo; Vanderheyden, Annelies; Vanhaeren, Danielle; Horiguchi, Naoto; Asenov, Asen (2014) -
Materials characterization of WNxCy, WNx and WCx films for advanced barriers
Volders, Henny; Tokei, Zsolt; Bender, Hugo; Brijs, Bert; Caluwaerts, Rudy; Carbonell, Laure; Conard, Thierry; Drijbooms, Chris; Franquet, Alexis; Garaud, Sylvain; Hoflijk, Ilse; Li, Wei-Min; Moussa, Alain; Sinapi, Fabrice; Sprey, Hessel; Travaly, Youssef; Vanhaeren, Danielle; Vereecke, Guy (2007) -
Mesoscopic physical removal of material using sliding nano-diamond contacts
Celano, Umberto; Hsia, Feng Chun; Vanhaeren, Danielle; Paredis, Kristof; Nordling, Torbjörn; Buijnsters, Josephus; Hantschel, Thomas; Vandervorst, Wilfried (2018) -
MOCVD growth of DH-HEMT buffers with low-temperature ALN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Van Hove, Marleen; Venegas, Rafael; Vrancken, Evi; Favia, Paola; Vanderheyden, Annelies; Vanhaeren, Danielle; Saripalli, Yoga; Decoutere, Stefaan; Langer, Robert (2015) -
MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Van Hove, Marleen; Venegas, Rafael; Vrancken, Evi; Favia, Paola; Vanderheyden, Annelies; Vanhaeren, Danielle; Saripalli, Yoga; Decoutere, Stefaan; Langer, Robert (2016) -
New SPM concept for accurate and repeatable tip positioning
Duriau, Edouard; Clarysse, Marc; Moussa, Alain; Vanhaeren, Danielle; Eyben, Pierre; Hantschel, Thomas; Vandervorst, Wilfried (2009) -
Nucleation behaviour of PEALD WS2 on Al2O3 and SiO2
Groven, Benjamin; Nalin Mehta, Ankit; Meersschaut, Johan; Vanhaeren, Danielle; Bender, Hugo; Verdonck, Patrick; Van Elshocht, Sven; Radu, Iuliana; Caymax, Matty; Delabie, Annelies (2016) -
On factors affecting the extraction of elastic modulus by nanoindentation of organic polymer films
Iacopi, Francesca; Laknin, M.; Mulloy, A.; den Toonder, J.M.J; Vanhaeren, Danielle; Brongersma, Sywert (2005) -
Peculiar alignment and strain behavior of 2D WSe2 monolayers grown by van der Waals epitaxy on engineered sapphire surfaces
Mortelmans, Wouter; El Kazzi, Salim; Nalin Mehta, Ankit; Vanhaeren, Danielle; Conard, Thierry; Meersschaut, Johan; Nuytten, Thomas; De Gendt, Stefan; Heyns, Marc; Merckling, Clement (2019) -
Pore propagation directions in p(+)porous silicon
Vazsonyi, Eva; Battistig, G.; Horvath, Z. E.; Fried, M.; Kadar, G.; Paszti, F.; Cantin, J. L.; Vanhaeren, Danielle; Stalmans, Lieven; Poortmans, Jef (2000) -
Pore propagation directions in p+ porous silicon
Vazsonyi, Eva; Battistig, G.; Horvath, Z. E.; Fried, M.; Kadar, G.; Paszti, F.; Cantin, J. L.; Vanhaeren, Danielle; Stalmans, Lieven; Poortmans, Jef (1998) -
Preferential in-plane alignment, twinning and strain in hetero- and homo-epitaxial growth of 2D selenides
Mortelmans, Wouter; Nalin Mehta, Ankit; Balaji, Yashwanth; El Kazzi, Salim; Vanhaeren, Danielle; Conard, Thierry; Meersschaut, Johan; Nuytten, Thomas; De Gendt, Stefan; Heyns, Marc; Merckling, Clement (2019) -
Preparation and characterization of electrochemically deposited copper alloys
Le, Quoc Toan; Vervoort, Iwan; Caluwaerts, Rudy; Conard, Thierry; Vanhaeren, Danielle; Maex, Karen (2002) -
Probing electrical properties of semiconductor structures on the nm-scale with SSRM
Vandervorst, Wilfried; Eyben, Pierre; Mody, Jay; Vanhaeren, Danielle; Schulze, Andreas (2009) -
Properties of ultrathin molybdenum films for interconnect applications
Founta, Valeria; Soulie, Jean-Philippe; Sankaran, Kiroubanand; Vanstreels, Kris; Opsomer, Karl; Morin, Pierre; Lagrain, Pieter; Franquet, Alexis; Vanhaeren, Danielle; Conard, Thierry; Meersschaut, Johan; Detavernier, Christophe; Van de Vondel, Joris; De Wolf, Ingrid; Pourtois, Geoffrey; Tokei, Zsolt; Swerts, Johan; Adelmann, Christoph (2022) -
Reliability aware simulation flow: from TCAD calibration to circuit level analysis
Hussin, Razzaidi; Gerrer, Louis; Ding, Jie; Amaroso, Salvatore; Wang, Liping; Simicic, Marko; Weckx, Pieter; Franco, Jacopo; Vanderheyden, Annelies; Vanhaeren, Danielle; Horiguchi, Naoto; Kaczer, Ben; Asenov, Asen (2015) -
Selective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement technique
Merckling, Clement; Waldron, Niamh; Jiang, Sijia; Guo, Weiming; Richard, Olivier; Douhard, Bastien; Moussa, Alain; Vanhaeren, Danielle; Bender, Hugo; Collaert, Nadine; Heyns, Marc; Thean, Aaron; Caymax, Matty; Vandervorst, Wilfried (2013) -
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow
Hussin, Razaidi; Gerrer, Louis; Ding, Jie; Wang, Liping; Amoroso, Salvatore; Cheng, Binjie; Weckx, Pieter; Simicic, Marko; Franco, Jacopo; Vanderheyden, Annelies; Vanhaeren, Danielle; Horiguchi, Naoto; Kaczer, Ben; Asenov, Asen (2015) -
Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor
Loo, Roger; Meunier-Beillard, Philippe; Vanhaeren, Danielle; Bender, Hugo; Caymax, Matty; Vandervorst, Wilfried; Dentel, D.; Goryll, M.; Vescan, L. (2001)