Browsing by author "Vanhellemont, Jan"
Now showing items 21-40 of 200
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Defect analysis in semiconductor materials based on p-n junction diode characteristics
Simoen, Eddy; Claeys, Cor; Vanhellemont, Jan (2007) -
Defects in As-grown silicon and their evolution during heat treatments
Vanhellemont, Jan; Dornberger, E.; Esfandyari, J.; Kissinger, G.; Trauwaert, Marie-Astrid; Bender, Hugo; Gräf, D.; Lambert, U.; von Ammon, W. (1997) -
Defects in crystalline silicon
Claeys, Cor; Vanhellemont, Jan (1994) -
Degradation and recovery of In0.53Ga0.47As photodiodes by 1-MeV fast neutrons
Ohyama, Hidenori; Vanhellemont, Jan; Takami, Y.; Hayama, Kiyoteru; Kudou, T.; Hakata, T.; Kohiki, S.; Sunaga, H. (1996) -
Degradation and recovery of proton irradiated Si1-xGe x epitaxial devices
Ohyama, Hidenori; Vanhellemont, Jan; Takami, Y.; Hayama, Kiyoteru; Sunaga, H.; Nashiyama, I.; Uwatoko, Y.; Poortmans, Jef; Caymax, Matty (1996) -
Degradation and recovery of Si1-xGex devices after proton irradiation
Ohyama, Hidenori; Vanhellemont, Jan; Takami, Y.; Hayama, Kiyoteru; Sunaga, H.; Nashiyama, I.; Uwatoko, Y.; Poortmans, Jef; Caymax, Matty (1996) -
Degradation and recovery of Si1-xGex devices by irradiation
Ohyama, Hidenori; Vanhellemont, Jan; Takami, Y.; Hayama, Kiyoteru; Kudo, T.; Hakata, T.; Kobayashi, K.; Sunaga, H.; Hironaka, I.; Poortmans, Jef; Caymax, Matty (1995) -
Degradation of InGaAs pin photodiodes by neutron irradiation
Ohyama, Hidenori; Vanhellemont, Jan; Takami, Y.; Hayama, Kiyoteru; Kudou, T.; Kohiki, S.; Sunaga, H.; Hakata, T. (1996) -
Degradation of MOSFETs on SIMOX by irradiation
Hakata, T.; Ohyama, Hidenori; Simoen, Eddy; Claeys, C.; Vanhellemont, Jan; Takami, Y.; Sunaga, H.; Ogita, Y. (1997) -
Degradation of Si1-xGex epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons
Ohyama, Hidenori; Vanhellemont, Jan; Takami, Y.; Hayama, Kiyoteru; Sunaga, H.; Poortmans, Jef; Caymax, Matty (1995) -
Degradation of Si1-xGex epitxial devices by proton irradiation
Ohyama, Hidenori; Hayama, Kiyoteru; Vanhellemont, Jan; Poortmans, Jef; Caymax, Matty; Takami, Y.; Sunaga, H.; Nashiyama, I.; Uwatoko, Y. (1996) -
Degradation of SiGe devices by proton irradiation
Ohyama, Hidenori; Vanhellemont, Jan; Takami, Y.; Hayama, Kiyoteru; Sunaga, H.; Nahsiyama, I.; Owatoko, Y.; Poortmans, Jef; Caymax, Matty (1997) -
Degradation of SiGe devices by proton irradiation
Ohyama, Hidenori; Vanhellemont, Jan; Takami, Y.; Sunaga, H.; Nashiyama, I.; Uwatoko, Y.; Poortmans, Jef; Caymax, Matty (1997) -
Determination of the oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IR spectroscopy
De Gryse, O.; Clauws, P.; Vanhellemont, Jan; Claeys, Cor (1997) -
Dépendance des Caractéristiques Electriques, avec la Concentration Initiale d'Oxygène Interstitiel, de Diodes Si Irradiées avec des Electrons à Hautes Energies
Dubuc, Jean-Paul; Simoen, Eddy; Vanhellemont, Jan; Claeys, C. (1995) -
Differential interference contrast microscopy of defects in As-grown and annealed Si wafers
Trauwaert, Marie-Astrid; Vanhellemont, Jan; Lambert, U.; Gräf, D.; Kenis, Karine; Mertens, Paul; Heyns, Marc (1997) -
Diffusion limited oxygen precipitation in silicon: precipitate growth kinectics and phase formation
Vanhellemont, Jan (1995) -
Diode characteristics and thermal donor formation in germanium-doped silicon substrates
Rafi, Joan-Marc; Vanhellemont, Jan; Simoen, Eddy; Chen, Jiahe; Zabala, M.; Yang, Derne (2012) -
Direct estimation of captive cross sections in the presence of low capture: application of the identifcation of quenched-in deep-level defects in Ge
Segers, Siegfried; Lauwaert, Johan; Clauws, Paul; Simoen, Eddy; Vanhellemont, Jan; Callens, Freddy; Vrielinck, Henk (2014) -
EBIC study of recombination activity of oxygen precipitation related defects in Si
Seifert, W.; Kittler, M.; Vanhellemont, Jan (1996)