Browsing by author "Vanhellemont, Jan"
Now showing items 41-60 of 200
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Effect of irradiation in InGaAs photo devices
Kudou, T.; Ohyama, Hidenori; Simoen, Eddy; Claeys, Cor; Vanhellemont, Jan; Sigaki, K.; Takami, Y.; Fujii, A. (1999) -
Effect of radiation source on the degradation in irradiated Si1-xGex epitaxial devices
Ohyama, Hidenori; Vanhellemont, Jan; Takami, Y.; Hayama, Kiyoteru; Sunaga, H.; Poortmans, Jef; Caymax, Matty (1996) -
Effect of substrate defects on GOI of ultra-thin gate oxides
Bearda, Twan; Vanhellemont, Jan; Mertens, Paul; Heyns, Marc (1998) -
Effective generation-recombination parameters in high-energy proton irradiated silicon diodes
Simoen, Eddy; Vanhellemont, Jan; Claeys, Cor (1996) -
Effects of irradiation in InGaAs photo devices
Kudou, T.; Ohyama, Hidenori; Sigaki, K.; Simoen, Eddy; Vanhellemont, Jan; Claeys, C.; Takami, Y.; Fujii, A. (1997) -
Electrical and structural properties of oxygen-precipitation induced extended defects in silicon
Claeys, Cor; Simoen, Eddy; Vanhellemont, Jan (1996) -
Electrical and structural properties of oxygen-precipitation induced extended defects in silicon
Claeys, C.; Simoen, Eddy; Vanhellemont, Jan (1997) -
Electron diffraction contrast imaging as a tool for nano-range strain analysis and application to a semiconductor laser structure
Janssens, Koenraad; Vanhellemont, Jan; Maes, Herman; Van Der Biest, O.; Hull, R. (1995) -
Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes
Chen, Jiahe; Vanhellemont, Jan; Simoen, Eddy; Lauwaert, Johan; Vrielinck, Henk; Rafi, Joan Marc; Ohyama, Hidenori; Weber, Jorg; Yang, Deren (2011) -
Electron microscopy techniques for the assessment of localised stress distributions in semiconductors
Vanhellemont, Jan; Janssens, Koenraad; Frabboni, S.; Balboni, R.; Armigliato, A. (1995) -
Electronic properties of titanium and chromium impurity centers in germanium
Lauwaert, J.; Van Gheluwe, J.; Vanhellemont, Jan; Simoen, Eddy; Clauws, P. (2009) -
Ellipsometric Determination of the Optical Properties of b-FeSi2
Libezny, Milan; Poortmans, Jef; Vanhellemont, Jan; Nijs, Johan; Piel, J. P.; von Känel, H. (1995) -
Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity
Gaubas, Eugenijus; Simoen, Eddy; Claeys, C.; Vanhellemont, Jan (2000) -
Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity
Gaubas, Eugenijus; Vaitkus, J.; Simoen, Eddy; Claeys, C.; Vanhellemont, Jan (2001) -
Extended defect related excess low-frequency noise in Si junction diodes
Simoen, Eddy; Vanhellemont, Jan; Bosman, Gijs; Czerwinsky, A.; Claeys, Cor (1996) -
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in a HREM
Fedina, L.; Gutakovskii, A.; Aseev, A.; Van Landuyt, J.; Vanhellemont, Jan (1999) -
Extraction of the minority carrier recombination lifetime from forward diode characteristics
Vanhellemont, Jan; Simoen, Eddy; Claeys, C. (1995) -
Generation and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes
Vanhellemont, Jan; Kaniava, Arvydas; Simoen, Eddy; Trauwaert, Marie-Astrid; Claeys, Cor (1994) -
Generation and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes
Vanhellemont, Jan; Kaniava, Arvydas; Simoen, Eddy; Trauwaert, Marie-Astrid; Claeys, Cor; Johlander, B.; Harboe-Sörensen, R.; Adams, L. (1994) -
Germanium Content Dependence of Radiation Damage in Electron-Irradiated Strained Si1-xGex Epitaxial Devices
Ohyama, Hidenori; Vanhellemont, Jan; Sunaga, H.; Poortmans, Jef; Caymax, Matty; Clauws, P. (1994)