Browsing by author "Vanhellemont, Jan"
Now showing items 61-80 of 200
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Germanium doping of Si substrates for improved device characteristics and yield
Vanhellemont, Jan; Chen, J.; Xu, W.; Yang, D.; Rafi, J.M.; Ohyama, H.; Simoen, Eddy (2010) -
Giant grown-in octahedral inclusions in as-grown silicon: voids versus silicon oxide precipitates
Vanhellemont, Jan (1996) -
Grown-in defect density spectra in czochralski silicon wafers
Kissinger, G.; Gräf, D.; Lambert, U.; Vanhellemont, Jan; Richter, H. (1996) -
Grown-in defects in germanium
Vanhellemont, Jan; Simoen, Eddy; Romandic, Igor; Theuwis, Antoon (2007) -
Growth and Properties of Ion Beam Synthesized Si/CoxN1-xSi2/Si (111) Structures
Wu, Ming Fang; De Wachter, Jo; Van Bavel, Mieke; Pattyn, Hugo; Langouche, G.; Vanhellemont, Jan; Bender, Hugo; Temst, K.; Wuyts, Bart; Bruynseraede, Y. (1994) -
High energy particle irradiation effects on the low-frequency noise of Czochralski silicon junction diodes
Simoen, Eddy; Vanhellemont, Jan; Dubuc, Jean-Paul; Claeys, Cor; Ohyama, Hidenori; Johlander, B. (1996) -
High energy proton irradiation effects on the electrical performance of silicon
Simoen, Eddy; Vanhellemont, Jan; Alaerts, André; Claeys, Cor; Ohyama, Hidenori; Sunaga, H.; Nahsiyama, I. (1996) -
High resolution electron microscopy for semiconductor materials
Van Landuyt, J.; Vanhellemont, Jan (1994) -
High resolution structure imaging of octohedral void defects
Bender, Hugo; Vanhellemont, Jan; Schmolke, R. (1997) -
Hydrogenation of multicrystalline Si-materials for solar cells: discrimination between effects in the intra-grain and grain boundary regions
Poortmans, Jef; Rosmeulen, Maarten; Kaniava, Arvydas; Vanhellemont, Jan; El Gamel, Hussam; Nijs, Johan (1995) -
Impact of dopants and silicon structure dimensions on {113}- defect formation during 2 MeV electron irradiation in an UHVEM
Vanhellemont, Jan; Anada, S.; Nagase, T.; Yasuda, H.; Schulze, Andreas; Bender, Hugo; Rooyackers, Rita; Vandooren, Anne (2015) -
Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates
Rotondaro, Antonio; Hurd, Trace; Kaniava, Arvydas; Vanhellemont, Jan; Simoen, Eddy; Heyns, Marc; Claeys, Cor (1996) -
Impact of Ge doping on Si substrate and diode characteristics
Vanhellemont, Jan; Lauwaert, Johan; Chen, Jiiahe; Vrielinck, Henk; Rafi, Joan Marc; Ohyama, Hidenori; Simoen, Eddy; Yang, Deren (2010) -
Impact of oxygen related extended defects on silicon diode characteristics
Vanhellemont, Jan; Simoen, Eddy; Kaniava, Arvydas; Libezny, Milan; Claeys, C. (1995) -
Impact of processing parameters on leakage current and defect behavior of n+p silicon junction diodes
Gramenova, Emilia; Jansen, Philippe; Simoen, Eddy; Vanhellemont, Jan; Dupas, Luc; Deferm, Ludo (1997) -
Impact of processing parameters on leakage current and defect behavior of n+p silicon junction diodes
Gramenova, Emilia; Jansen, Philippe; Simoen, Eddy; Vanhellemont, Jan; Dupas, Luc; Deferm, Ludo (1999) -
Impact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodes
Simoen, Eddy; Dubuc, Jean-Paul; Vanhellemont, Jan; Claeys, Cor (1996) -
Impact of the substrate on the low-frequency noise of silicon n+p junction diodes
Simoen, Eddy; Bosman, Gijs; Vanhellemont, Jan; Claeys, Cor (1995) -
Impact of the substrate quality on the low frequency noise of silicon diodes
Simoen, Eddy; Bosman, Gijs; Vanhellemont, Jan; Claeys, Cor (1994) -
Impact of the substrate quality on the low frequency noise of silicon diodes
Simoen, Eddy; Bosman, Gijs; Vanhellemont, Jan; Claeys, Cor (1996)