Browsing by author "You, Shuzhen"
Now showing items 61-80 of 81
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p-GaN gate HEMTs, RTL logic, and gate driver monolithically integrated on 200 mm QST® substrates for GaN ICs
Li, Xiangdong; Geens, Karen; Guo, Weiming; Zhao, Ming; You, Shuzhen; Posthuma, Niels; Stoffels, Steve; Liang, Hu; Odnoblyudov, Vladimir; Basceri, Cem; Aktas, Ozgur; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Pedestal collector optimization for high speed SiGe:C HBT
Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; You, Shuzhen; Vleugels, Frank; Radisic, Dunja; Lee, Willie; Vanherle, Wendy; De Meyer, Kristin; Decoutere, Stefaan (2011) -
Physical origin of current collapse in Au-free AlGaN/GaN Schottky barrier diodes
Hu, Jie; Stoffels, Steve; Lenci, Silvia; Ronchi, Nicolo; Venegas, Rafael; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan (2014) -
Recombination in the Ge-spiked monoemitter of the SiGe:C HBTs
You, Shuzhen; Decoutere, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; Van Huylenbroeck, Stefaan; De Meyer, Kristin (2011) -
Reliability of p-GaN Gate HEMTs in Reverse Conduction
Cingu, Deepthi; Li, Xiangdong; Bakeroot, Benoit; Amirifar, Nooshin; Geens, Karen; Jacobs, Kristof J.P.; Zhao, Ming; You, Shuzhen; Groeseneken, Guido; Decoutere, Stefaan (2021) -
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices
Diehle, Patrick; Hübner, Susanne; De Santi, Carlo; Mukherjee, Kalparupa; Zanoni, Enrico; Meneghini, Matteo; Geens, Karen; You, Shuzhen; Decoutere, Stefaan; Altmann, Frank (2021) -
Stability evaluation of Au-free ohmic contacts on AlGaN/GaN HEMTs under a constant current stress
Wu, Tian-Li; Marcon, Denis; Stoffels, Steve; You, Shuzhen; De Jaeger, Brice; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2014) -
Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
Hu, Jie; Stoffels, Steve; Lenci, Silvia; De Jaeger, Brice; Ronchi, Nicolo; Tallarico, Andrea; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan (2016) -
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
Mukherjee, K.; De Santi, C.; You, Shuzhen; Geens, Karen; Borga, Matteo; Decoutere, Stefaan; Bakeroot, Benoit; Diehle, P.; Altmann, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Study of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes
Hu, Jie; Stoffels, Steve; Lenci, Silvia; Wu, Tian-Li; Ronchi, Nicolo; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan (2014) -
Study of emission and capture processes in semi-vertical GaN-on-Si trench-MOSFETs
Drobnŭ, Jakub; Marek, Juraj; Kosa, A.; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2021) -
Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Guo, Weiming; You, Shuzhen; Stoffels, Steve; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2018) -
Surface-potential-based compact model for the gate current of p-GaN gate HEMTs
Wang, Jie; Chen, Zhanfei; You, Shuzhen; Zhou, Wenyong; Bakeroot, Benoit; Liu, Jun; Sun, Lingling; Decoutere, Stefaan (2020) -
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
Wang, Jie; Chen, Zhanfei; You, Shuzhen; Bakeroot, Benoit; Liu, Jun; Decoutere, Stefaan (2021) -
TCAD based device architecture exploration towards half-terahertz slicon/germanium heterojuntion bipolar technology
Sibaja-Hernandez, Arturo; You, Shuzhen; Van Huylenbroeck, Stefaan; Venegas, Rafael; De Meyer, Kristin; Decoutere, Stefaan (2010) -
The physical mechanism of dispersion caused by AlGaN/GaN buffers on Si and optimization for low dispersion
Stoffels, Steve; Zhao, Ming; Venegas, Rafael; Kandaswamy, Prem Kumar; You, Shuzhen; Novak, Thomas; Saripalli, Yoga; Van Hove, Marleen; Decoutere, Stefaan (2015) -
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(-)n Diodes: The Road to Reliable Vertical MOSFETs
Mukherjee, Kalparupa; De Santi, Carlo; Buffolo, Matteo; Borga, Matteo; You, Shuzhen; Geens, Karen; Meneghini, Matteo; Bakeroot, Benoit; Decoutere, Stefaan; Gerosa, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico (2021) -
Use of bilayer gate insulator in GaN-on-Si vertical trench MOSFETs: Impact on performance and reliability
Mukherjee, Kalparupa; De Santi, Carlo; Borga, Matteo; You, Shuzhen; Geens, Karen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices
Bakeroot, Benoit; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan (2020) -
Vertical GaN devices: Process and reliability
You, Shuzhen; Geens, Karen; Borga, Matteo; Liang, Hu; Hahn, Herwig; Fahle, Dirk; Heuken, Michael; Mukherjee, Kalparupa; De Santi, Carlo; Meneghini, Matteo; Zanoni, Enrico; Berg, Martin; Ramvall, Peter; Kumar, Ashutosh; Bjork, Mikael T.; Ohlsson, B. Jonas; Decoutere, Stefaan (2021)