Browsing by availability "Published

0-level packaging for (RF-)MEMS

Tilmans, Harrie (2003)

0-Level packaging techniques for flip-chip mounted MMICs

De Raedt, Walter; Brebels, Steven; Monfraix, P.; Carchon, Geert; Jourdain, Anne; Tilmans, Harrie (2001)

0.18 μm KrF lithography using optical proximity correction based on empirical behavior modeling

Tritchkov, Alexander; Stirnimann, J.; Gangala, Hareen K; Ronse, Kurt (1998)

0.5µm and 0.35µm BiCMOS - silicon etch developement at IMEC

Beckx, Stephan (1998)

'1 Thru +2.5 Reflects': A new technique for de-embedding MIC/MMIC device measurements in fixed-length fixtures

Wang, Connie; Nauwelaers, Bart; De Raedt, Walter; Van Rossum, Marc (1996)

1 μm-thin crystalline silicon solar cells with amorphous-ordered nanotextures (PhotoNVoltaics project)

Depauw, Valerie; Trompoukis, Christos; Massiot, Ines; Chen, Wanghua; Dmitriev, Alexandre; Roca i Cabarrocas, Pere; Gordon, Ivan (2016)

1-((2,4-dichlorophenethyl)amino)-3-phenoxypropan-2-ol kills Pseudomonas aeruginosa through extensive membrane damage

Defraine, Valerie; Liebens, Veerle; Loos, Evelien; Swings, Toon; Weytjens, Bram; Fierro, Carolina; Marchal, Kathleen; Sharkey, Liam; O'Neill, Alex; Corbau, Romu; Marchand, Arnaud; Chaltin, Patrick; Fauvart, Maarten; Michiels, Jan (2018)

1-μm-thin crystalline silicon solar cells with pseudo-ordered nanotextures

Depauw, Valerie; Massiot, Ines; Chen, Wanghua; Trompoukis, Christos; Bearda, Twan; Dmitriev, Alexandre; Roca i Cabarrocas, Pere; Gordon, Ivan; Poortmans, Jef (2016)

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

Kumar, Sujit; Geens, Karen; Vohra, Anurag; Wellekens, Dirk; Cingu, Deepthi; Fabris, Elena; Cosnier, Thibault; Hahn, H.; Bakeroot, Benoit; Posthuma, Niels; Langer, Robert; Decoutere, Stefaan (2024)

1.25GHz repetition rate operation of a SOA-DFB laser diode based all-optical flip-flop

D'Oosterlinck, Wouter; Perez Pardo, A.; Ortigosa Blanch, A.; Puerto, G.; Sales, S.; Morthier, Geert; Baets, Roel (2007-06)

1.3 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding

Uvin, Sarah; Kumari, Sulakshna; De Groote, Andreas; Verstuyft, Steven; Lepage, Guy; Verheyen, Peter; Van Campenhout, Joris; Morthier, Geert; Van Thourhout, Dries; Roelkens, Gunther (2018-07)

1.55-μm InP-InGaAsP Fabry-Perot lasers with integrated spot size converters using antiresonant reflecting optical waveguides

Galarza, Marko; De Mesel, Kurt; Verstuyft, Steven; Aramburu, C.; Moerman, Ingrid; Van Daele, Peter; Baets, Roel; Lopez-Amo, Manuel (2002)

1.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation

Yu, Hao; Schaekers, Marc; Rosseel, Erik; Peter, Antony; Lee, Joon-Gon; Song, Woo-Bin; Demuynck, Steven; Chiarella, Thomas; Ragnarsson, Lars-Ake; Kubicek, Stefan; Everaert, Jean-Luc; Horiguchi, Naoto; Barla, Kathy; Kim, Daeyong; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2015)

1/f low frequency fluctuations and inversion layer quantization in deep submicron metal-oxide-semiconductor field effect transistors

Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2002)