Browsing imec Publications by author "Zaima, Shigeaki"
Now showing items 21-32 of 32
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Interface and defect control for group IV channel engineering
Sakai, Akira; Ohara, Yuji; Ueda, Takaya; Toyoda, Eiji; Izunome, Koji; Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki; Kimura, Shigeru (2008) -
International collaboration: the path to breakthroughs in (Si)GeSn material development
Loo, Roger; Caymax, Matty; Vantomme, Andre; Nakatsuka, Osamu; Zaima, Shigeaki (2016) -
Introduction of Sn into GeSn based group-IV thin films and its impacts
Shimura, Yosuke; Ike, Shinichi; Gencarelli, Federica; Takeuchi, Wakana; Sakashita, Mitsuo; Kurosawa, Masashi; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2016-09) -
Marial characterization of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, T; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010-10) -
Material assessment for uni-axial strained Ge pMOS -1: characterization of GeSn(B) materials
Vincent, Benjamin; Shimura, Yosuke; Takeuchi, Shotaro; Nishimura, Tsuyoshi; Demeulemeester, Jelle; Eneman, Geert; Clarysse, Trudo; Vandervorst, Wilfried; Vantomme, Andre; Nakatsuka, Osamu; Zaima, Shigeaki; Dekoster, Johan; Caymax, Matty; Loo, Roger (2010) -
Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates
Yamazaki, Masahiro; Takeuchi, Shotaro; Nakatsuka, Osamu; Sakai, Akira; Ogawa, Masaki; Zaima, Shigeaki (2008) -
Si passivation for Ge pMOSFETs: impact of Si cap growth conditions
Vincent, Benjamin; Loo, Roger; Vandervorst, Wilfried; Delmotte, Joris; Douhard, Bastien; Valev, Ventislav; Vanbel, Maarten; Verbiest, Thierry; Rip, Jens; Brijs, Bert; Conard, Thierry; Claypool, Chris; Takeuchi, Shotaro; Zaima, Shigeaki; Mitard, Jerome; De Jaeger, Brice; Dekoster, Johan; Caymax, Matty (2011) -
(Si)GeSn requirements for optical device applications and solar cells
Takeuchi, Shotaro; Vincent, Benjamin; Temst, Kristiaan; Vantomme, A.; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010-05) -
Structural and electrical properties of low temperature CVD-grown SiGe epitaxial layers
Ike, Shinichi; Simoen, Eddy; Shimura, Yosuke; Hikavyy, Andriy; Vandervorst, Wilfried; Loo, Roger; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki (2016) -
Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers
Shimura, Yosuke; Takeuchi, Shotaro; Sakai, Akira; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2007) -
Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates
Takeuchi, Shotaro; Sakai, Akira; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2008) -
X-ray microdiffraction measurements to support epitaxial growth studies of strained Ge-cap / relaxed SiGe on STI nano-scale patterned Si wafers
Loo, Roger; Shimura, Yosuke; Sun, Jianwu; Ike, Shinichi; Inuzuka, Yuuki; Nakatsuka, Osau; Zaima, Shigeaki; Imai, Yasuhiko; Kimura, Shigeru (2015)