Recently added

Coping with time-dependent variability : By a combined design and technology co-optimization

Weckx, Pieter (2016-06)

Room temperature InGaAs/InP distributed feedback laser directly grown on silicon

Wang, Zhechao; Tian, Bin; Pantouvaki, Marianna; Van Campenhout, Joris; Merckling, Clement; Van Thourhout, Dries (2016)

Heterogeneous integration of inp devices on silicon

Wang, Zhechao; Pantouvaki, Marianna; Morthier, Geert; Merckling, Clement; Van Campenhout, Joris; Van Thourhout, Dries; Roelkens, Gunther (2016)

Heterogeneous integration of InP devices on silicon

Wang, Zhechao; Pantouvaki, Marianna; Morthier, Geert; Merckling, Clement; Van Campenhout, Joris; Van Thourhout, Dries; Roelkens, Gunther (2016)

Monolithic/heterogeneous integration of IIIV lasers on silicon

Wang, Zhechao; Merckling, Clement; Pantouvaki, Marianna; Van Campenhout, Joris; Morthier, Geert; Roelkens, Gunther; Van Thourhout, Dries (2016)

On the feasibility of die-to-wafer inorganic dielectric bonding

Wang, Teng; Podpod, Arnita; Capuz, Giovanni; Peng, Lan; Phommahaxay, Alain; Inoue, Fumihiro; Bex, Pieter; Dubey, Vikas; Rebibis, Kenneth June; Miller, Andy; Beyer, Gerald; Beyne, Eric (2016)

Application of 3D X-ray microscopy for 3D IC process development

Wang, Teng; De Wolf, Ingrid; Gu, Allen; Estrada, Raleigh (2016)

3D IC assembly using thermal compression bonding and wafer-level underfill – strategies for quality improvement and throughput enhancement

Wang, Teng; Bex, Pieter; Capuz, Giovanni; Duval, Fabrice; Inoue, Fumihiro; Gerets, Carine; Bertheau, Julien; Rebibis, Kenneth June; Miller, Andy; Beyer, Gerald; Beyne, Eric; Natsukawa, Masanori; Mitsukura, Kazuyuki; Hatakeyama, Keiichi (2016)

Heterogeneous integration of InP-based type-II active devices on silicon for 2 μm wavelength range on-chip spectroscopy

Wang, Ruijun; Sprengel, Stephane; Muneeb, Muhammed; Boehm, Gerhard; Mailik, Aditya; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther (2016)

Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

Wang, Ruijun; Sprengel, Stephane; Malik, Aditya; Vasiliev, Anton; Boehm, Gerhard; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther (2016)

Design and fabrication of type-II InP-based lasers and photodetectors integrarted on SOI waveguide

Wang, Ruijun; Sprengel, S.; Muneeb, Muhammed; Boehm, Gerhard; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther (2016)

2.3 μm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit

Wang, Ruijun; Sprengel, S.; Boehm, Gerhard; Muneeb, Muhammed; Baets, Roel; Amann, Markus-C.; Roelkens, Gunther (2016-09)

III-V-on-silicon 2-μm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodectectors

Wang, Ruijun; Muneeb, Muhammed; Sprengel, Stephane; Boehm, Gerhard; Malik, Aditya Singh; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther (2016)

imec Publications: Recent submissions

Coping with time-dependent variability : By a combined design and technology co-optimization

Room temperature InGaAs/InP distributed feedback laser directly grown on silicon

Heterogeneous integration of inp devices on silicon

Heterogeneous integration of InP devices on silicon

Monolithic/heterogeneous integration of IIIV lasers on silicon

On the feasibility of die-to-wafer inorganic dielectric bonding

Application of 3D X-ray microscopy for 3D IC process development

3D IC assembly using thermal compression bonding and wafer-level underfill – strategies for quality improvement and throughput enhancement

Heterogeneous integration of InP-based type-II active devices on silicon for 2 μm wavelength range on-chip spectroscopy

Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

Design and fabrication of type-II InP-based lasers and photodetectors integrarted on SOI waveguide

2.3 μm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit

III-V-on-silicon 2-μm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodectectors

SWIR InGaAs/GaAsSb type-II quantum well photodetectors and spectrometers integrated on SOI

Compact GaSb/silicon-on-insulator 2.0x μm widely tunable external cavity lasers

Biomedical radars for monitoring health

Process window and defect monitoring using high-throughput e-beam inspection guided by computational hot spot detection

Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs

Replacement fin processing for III-V on Si: From FinFets to nanowires

Optimization of silicon photonic components using multi-fidelity simulations and co-kriging

imec Publications: Recent submissions

Coping with time-dependent variability : By a combined design and technology co-optimization ﻿

Room temperature InGaAs/InP distributed feedback laser directly grown on silicon ﻿

Heterogeneous integration of inp devices on silicon ﻿

Heterogeneous integration of InP devices on silicon ﻿

Monolithic/heterogeneous integration of IIIV lasers on silicon ﻿

On the feasibility of die-to-wafer inorganic dielectric bonding ﻿

Application of 3D X-ray microscopy for 3D IC process development ﻿

3D IC assembly using thermal compression bonding and wafer-level underfill – strategies for quality improvement and throughput enhancement ﻿

Heterogeneous integration of InP-based type-II active devices on silicon for 2 μm wavelength range on-chip spectroscopy ﻿

Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region ﻿

Design and fabrication of type-II InP-based lasers and photodetectors integrarted on SOI waveguide ﻿

2.3 μm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit ﻿

III-V-on-silicon 2-μm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodectectors ﻿

SWIR InGaAs/GaAsSb type-II quantum well photodetectors and spectrometers integrated on SOI ﻿

Compact GaSb/silicon-on-insulator 2.0x μm widely tunable external cavity lasers ﻿

Biomedical radars for monitoring health ﻿

Process window and defect monitoring using high-throughput e-beam inspection guided by computational hot spot detection ﻿

Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs ﻿

Replacement fin processing for III-V on Si: From FinFets to nanowires ﻿

Optimization of silicon photonic components using multi-fidelity simulations and co-kriging ﻿

Coping with time-dependent variability : By a combined design and technology co-optimization

Room temperature InGaAs/InP distributed feedback laser directly grown on silicon

Heterogeneous integration of inp devices on silicon

Heterogeneous integration of InP devices on silicon

Monolithic/heterogeneous integration of IIIV lasers on silicon

On the feasibility of die-to-wafer inorganic dielectric bonding

Application of 3D X-ray microscopy for 3D IC process development

3D IC assembly using thermal compression bonding and wafer-level underfill – strategies for quality improvement and throughput enhancement

Heterogeneous integration of InP-based type-II active devices on silicon for 2 μm wavelength range on-chip spectroscopy

Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

Design and fabrication of type-II InP-based lasers and photodetectors integrarted on SOI waveguide

2.3 μm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit

III-V-on-silicon 2-μm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodectectors

SWIR InGaAs/GaAsSb type-II quantum well photodetectors and spectrometers integrated on SOI

Compact GaSb/silicon-on-insulator 2.0x μm widely tunable external cavity lasers

Biomedical radars for monitoring health

Process window and defect monitoring using high-throughput e-beam inspection guided by computational hot spot detection

Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs

Replacement fin processing for III-V on Si: From FinFets to nanowires

Optimization of silicon photonic components using multi-fidelity simulations and co-kriging