Browsing Conference contributions by imec author "5c7482e611cc5bbfdfca0137f83ae51de2d072ff"

Now showing items 1-5 of 5

    • 2D materials: roadmap to CMOS integration 

      Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018)

    • Optimizing the MOS capacitor design to study large area 2D-oxide interface 

      Gaur, Abhinav; Lin, Dennis; Chiappe, Daniele; Adelmann, Christoph; Van Houdt, Jan; Mocuta, Dan; Heyns, Marc; Radu, Iuliana (2017)

    • Scaled transistors with 2D materials from the 300mm fab 

      Asselberghs, Inge; Schram, Tom; Smets, Quentin; Groven, Benjamin; Brems, Steven; Phommahaxay, Alain; Cott, Daire; Dupuy, Emmanuel; Radisic, Dunja; de Marneffe, Jean-Francois; Thiam, Arame; Li, Waikin; Devriendt, Katia; Gaur, Abhinav; Verreck, Devin; Maurice, Thibaut; Lin, Dennis; Morin, Pierre; Radu, Iuliana (2020)

    • Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contacted pitch and 250μA/μm drain current 

      Smets, Quentin; Arutchelvan, Goutham; Jussot, Julien; Verreck, Devin; Asselberghs, Inge; Nalin Mehta, Ankit; Gaur, Abhinav; Lin, Dennis; El Kazzi, Salim; Groven, Benjamin; Caymax, Matty; Radu, Iuliana (2019)

    • Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab 

      Asselberghs, Inge; Smets, Quentin; Schram, Tom; Groven, Benjamin; Verreck, Devin; Afzalian, Aryan; Arutchelvan, Goutham; Gaur, Abhinav; Cott, Daire; Maurice, Thibaut; Brems, Steven; Kennes, Koen; Phommahaxay, Alain; Dupuy, Emmanuel; Radisic, Dunja; de Marneffe, Jean-Francois; Thiam, Arame; Li, Waikin; Devriendt, Katia; Huyghebaert, Cedric; Lin, Dennis; Caymax, Matty; Morin, Pierre; Radu, Iuliana (2020)