Browsing Conference contributions by imec author "a06c05f120dc9846f2273329c61c503e9b572f30"
Now showing items 1-20 of 64
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6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
Advanced ultralow-k organosilicate glasses: NEXAFS study
Konashuk, A.; Filatova, E.; Afanasiev, Valeri; Krishtab, Mikhail; Redzheb, Murad; Baklanov, Mikhaïl (2015) -
Advances in SiCN-SiCN bonding with high accuracy wafer-to-wafer (W2W) stacking technology
Peng, Lan; Kim, Soon-Wook; Iacovo, Serena; Inoue, Fumihiro; Phommahaxay, Alain; Sleeckx, Erik; De Vos, Joeri; Zinner, Dominik; Thomas, Wagenleitner; Thomas, Uhrmann; Markus, Wimplinger; Ben, Schoenaers; Andre, Stesmans; Afanasiev, Valeri; Miller, Andy; Beyer, Gerald; Beyne, Eric (2018) -
Atomic and electrical characterisation of amorphous silicon passivation layers
O'Sullivan, Barry; Thoan, N.H.; Jivanescu, M.; Pantisano, Luigi; Bearda, Twan; Dross, Frederic; Gordon, Ivan; Afanasiev, Valeri; Stesmans, Andre; Poortmans, Jef (2012) -
Atomic layer deposited Gd-doped HfO2 thin films: from high-k dielectrics to ferroelectrics
Adelmann, Christoph; Ragnarsson, Lars-Ake; Moussa, Alain; Woicik, Joseph; Mueller, Stefan; Schoeder, Uwe; Afanasiev, Valeri; Van Elshocht, Sven (2012) -
Atomic layer deposition of GdAlOx and GdHfOx using Gd(iPr-Cp)3
Adelmann, Christoph; Pierreux, Dieter; Swerts, Johan; Kesters, Jurgen; Richard, Olivier; Conard, Thierry; Franquet, Alexis; Tielens, Hilde; Afanasiev, Valeri; Schaekers, Marc; Van Elshocht, Sven (2009) -
Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich GexSe1-x materials for selector applications
Clima, Sergiu; Govoreanu, Bogdan; Opsomer, Karl; Velea, Alin; Avasarala, Naga Sruti; Devulder, Wouter; Shlyakhov, I.; Donadio, Gabriele Luca; Witters, Thomas; Kundu, Shreya; Goux, Ludovic; Afanasiev, Valeri; Kar, Gouri Sankar; Pourtois, Geoffrey (2017) -
Bandgap narrowing in low-k dielectrics
Guo, X; King, S; Xue, P; de Marneffe, Jean-Francois; Baklanov, Mikhaïl; Afanasiev, Valeri; Nishi, Y.; Shohet, J. (2015) -
Capacitance-voltage and conductance analysis of high-k/InxGa1-xAs structures (x = 0, 0.15, 0.3, and 0.53)
Hurley, P.K.; O'Connor, E.; Monaghan, S.; Long, R.D.; O'Mahony, A.; Povey, I.M.; Cherkaoui, K.; Pemble, M.E.; MacHale, J.; Quinn, A.J.; Brammertz, Guy; Heyns, Marc; Newcomb, S.B.; Afanasiev, Valeri (2009) -
Characterization of interface interactions between Graphene and Ruthenium
Achra, Swati; Wu, Xiangyu; Trepalin, Vadim; Nuytten, Thomas; Ludwig, Jonathan; Brems, Steven; Afanasiev, Valeri; Huyghebaert, Cedric; Soree, Bart; Asselberghs, Inge; Tokei, Zsolt (2020) -
Contact resistivities at graphene/MoS2 lateral heterojunctions
Houssa, Michel; Iordanidou, K.; Dabral, Ashish; Lu, A.; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2018) -
Control of metal/oxide electron barriers in CB-RAM cells by low work-function liners
De Stefano, Francesca; Afanasiev, Valeri; Houssa, Michel; Stesmans, Andre; Opsomer, Karl; Jurczak, Gosia; Goux, Ludovic (2013) -
CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices
Vincent, Benjamin; Gencarelli, Federica; Kumar, Arul; Vantomme, Andre; Merckling, Clement; Lin, Dennis; Afanasiev, Valeri; Eneman, Geert; Clarysse, Trudo; Firrincieli, Andrea; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Defect localization in 3-D TSV structures by differential light-induced capacitance alteration
Jacobs, Kristof J.P.; Stucchi, Michele; Afanasiev, Valeri; Gonzalez, Mario; Croes, Kristof; De Wolf, Ingrid; Beyne, Eric (2018) -
Electron trap energy distribution in ALD Al2O3, LaAl4Ox, and GdyAl2-yO3 layers on silicon
Wang, Mugwort; Badylevich, M.; Adelmann, Christoph; Swerts, Johan; Kittl, Jorge; Afanasiev, Valeri (2012) -
Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2
Afanasiev, Valeri; Stesmans, Andre; Delabie, Annelies; Houssa, Michel (2007) -
Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering
Pawlak, Malgorzata; Popovici, Mihaela Ioana; Swerts, Johan; Tomida, Kazuyuki; Kim, Min-Soo; Kaczer, Ben; Opsomer, Karl; Schaekers, Marc; Favia, Paola; Bender, Hugo; Vrancken, Christa; Govoreanu, Bogdan; Demeurisse, Caroline; Wang, Wan-Chih; Afanasiev, Valeri; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010) -
Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells
Goux, Ludovic; Degraeve, Robin; Govoreanu, Bogdan; Chou, H.-Y.; Afanasiev, Valeri; Meersschaut, Johan; Toeller, Michael; Wang, X.P.; Kubicek, Stefan; Richard, Olivier; Kittl, Jorge; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith (2011) -
Experimental characterization of BTI defects
Kaczer, Ben; Afanasiev, Valeri; Rott, Karina; Cerbu, F.; Franco, Jacopo; Grasser, Tibor; Madia, O.; Nguyen, A. P. D.; Stesmans, Andre; Resinger, Hans; Toledano Luque, Maria; Weckx, Pieter (2013) -
Experimental Study Of Interface & Bulk Defectivity In Ultra-Thin BEOL Dielectrics By Using Low Frequency Noise Spectroscopy
Saini, Nishant; Tierno, Davide; Croes, Kristof; Afanasiev, Valeri (2023)