Browsing Conference contributions by imec author "a3e793245a8929ea03475a8a62c9583a2557cb56"
Now showing items 1-20 of 49
-
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
Cosnier, Thibault; Syshchyk, Olga; De Jaeger, Brice; Geens, Karen; Cingu, Deepthi; Fabris, Elena; Borga, Matteo; Vohra, Anurag; Zhao, Ming; Bakeroot, Benoit; Wellekens, Dirk; Magnani, Alessandro; Vudumula, Pavan; Chatterjee, Urmimala; Langer, Robert; Decoutere, Stefaan (2021) -
A high-voltage switching ADSL line-driver, with an n-type output stage
Buyle, J.; De Gezelle, V.; Bakeroot, Benoit; Doutreloigne, Jan (2008-07) -
A new charge based compact model for lateral asymmetric MOSFET and its application to high voltage MOSFET modeling
Chauhan, Y.; Krummenacher, F.; Anghel, C.; Gillon, R.; Bakeroot, Benoit; Declercq, M.; Ionescu, A. (2007-01) -
A new substrate current free nLIGBT for junction isolated technologies
Bakeroot, Benoit; Doutreloigne, Jan; Moens, Peter (2004) -
A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers
Buyle, J.; De Gezelle, V.; Bakeroot, Benoit; Doutreloigne, Jan (2008-08) -
AlON gate dielectric and gate trench cleaning for improved relia-bility of vertical GaN MOSFET
Filho Goncalez, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Knaepen, Werner; Arnou, Panagiota; Homm, Pia (2022) -
An experimental approach for bias-dependent drain series resistance evaluation in asymmetric HV MOSFETs
Hefyene, N.; Anghel, C.; Ionescu, A. M.; Frere, S.; Gillon, R.; Vermandel, Miguel; Bakeroot, Benoit; Doutrloigne, J. (2001) -
An ultrafast and latch-up free lateral IGBT with hole diverter for junction-isolated technologies
Bakeroot, Benoit; Doutreloigne, Jan; Vanmeerbeek, P.; Moens, P. (2007-06) -
Cost effective implementation of a 90 V RESURF P-type drain extended MOS in a 0.35 μm based smart power technology
Bakeroot, Benoit; Vermandel, Miguel; Moens, P.; Doutreloigne, Jan; Bolognesi, D. (2002) -
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
Mukherjee, Kalparupa; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo; You, Shuzhen; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan (2020) -
Device breakdown optimization of Al2O3/GaN E-mode MISFETs
Kang, Xuanwu; Wellekens, Dirk; Van Hove, Marleen; De Jaeger, Brice; Ronchi, Nicolo; Wu, Tian-Li; You, Shuzhen; Bakeroot, Benoit; Hu, Jie; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan (2016) -
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
Syshchyk, Olga; Cosnier, Thibault; Huang, Zheng-Hong; Cingu, Deepthi; Wellekens, Dirk; Vohra, Anurag; Geens, Karen; Vudumula, Pavan; Chatterjee, Urmimala; Decoutere, Stefaan; Wu, Tian-Li; Bakeroot, Benoit (2022) -
Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates
You, Shuzhen; Posthuma, Niels; Ronchi, Nicolo; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Liang, Hu; Zhao, Ming; Decoutere, Stefaan (2018) -
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
Tajalli, A.; Stockman, Arno; Meneghini, M.; Mouhoubi, S.; Banerjee, A.; Gerardin, S.; Bagatin, M.; Paccagnella, A.; Zanoni, E.; Tack, M.; Bakeroot, Benoit; Moens, P.; Meneghesso, G. (2018) -
Electrical and DLTS Characterization of AlN buffers for GaN on Si technology
Mare, Juraj; Mikolasek, Miroslav; Drobny, Jakub; Zhao, Ming; Stoffels, Steve; Kosa, Arpad; Benko, Peter; Chvála, Aleš; Bakeroot, Benoit; Decoutere, Stefaan; Stuchlikova, Lubica (2019) -
Electrical characterisation of high voltage MOSFETs using MESDRIFT
Anghel, C.; Hefyene, N.; Vermandel, Miguel; Bakeroot, Benoit; Doutreloigne, Jan; Gillon, R.; Ionescu, A.M. (2003) -
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Fahle, Dirk; Zhao, Ming; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan; Hahn, Herwig; Heuken, Michael (2019) -
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration
Stoffels, Steve; Bakeroot, Benoit; Wu, Tian-Li; Marcon, Denis; Posthuma, Niels; Decoutere, Stefaan; Tallarico, A.N.; Fiegna, C. (2017) -
Future trends in intelligent interface technologies for 42V battery automotive applications
Moens, P.; Bolognesi, D.; Delobel, L.; Villanueva, D.; Reynders, K.; Lowe, A.; Van Herzeele, G.; Tack, M.; Bakeroot, Benoit (2002) -
GaN Device architectures enabled by next generation substrates
Stoffels, Steve; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Van Hove, Marleen; Decoutere, Stefaan (2018)