Browsing Conference contributions by imec author "a3e793245a8929ea03475a8a62c9583a2557cb56"
Now showing items 21-40 of 49
-
GaN-on-SOI: Monolithically integrated all GaN ICs for power conversion
Li, Xiangdong; Amirifar, Nooshin; Geens, Karen; Zhao, Ming; Guo, Weiming; Liang, Hu; You, Shuzhen; Posthuma, Niels; De Jaeger, Brice; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Cosnier, Thibault; Langer, Robert; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Gate module study for performance improvement in vertical GaN device
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2021) -
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
Millesimo, M.; Bakeroot, Benoit; Borga, Matteo; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N. (2022) -
Gate stability of enhancement mode GaN power devices
Wu, Tian-Li; Marcon, Denis; De Jaeger, Brice; Posthuma, Niels; Bakeroot, Benoit; You, Shuzhen; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2016) -
Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination
Hu, Jie; Stoffels, Steve; Lenci, Silvia; Ronchi, Nicolo; De Jaeger, Brice; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan (2016) -
Improving Time-Dependent Gate Breakdown of GaN HEMTs with p-type Gate
Tallarico, Andrea; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Fiegna, C; Sangiorgi, E (2021) -
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
Favero, D.; De Santi, C.; Mukherjee, K.; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Integrated driver with optical compensation for improved uniformity of emissive displays
Maeyaert, Stefaan; Bakeroot, Benoit; Doutreloigne, Jan; Monte, Ann; Bauwens, P.; Van Calster, Andre (2008-10) -
Integration of GaN power ICs on 200 mm engineered substrates
Li, Xiangdong; Geens, Karen; Wellekens, Dirk; Zhao, Ming; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Fahle, Dirk; Hahn, Herwig; Odnoblyudov, Vlad; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2020) -
Investigation of trapping effects on Au-free AlGaN/GaN Schottky diodes fabricated on C-doped buffer layers
Hu, Jie; Stoffels, Steve; Lenci, Silvia; You, Shuzhen; Bakeroot, Benoit; Ronchi, Nicolo; Venegas, Rafael; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Investigations and physical modelling of saturation effects in lateral DMOS transistor architectures based on the concept of intrinsic drain voltage
Anghel, C.; Hefyene, N.; Ionescu, A. M.; Vermandel, Miguel; Bakeroot, Benoit; Doutrloigne, J.; Gillon, R.; Frere, S.; Maier., C.; Mourier, Y. (2001) -
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
Stockman, Arno; Canato, E.; Tajalli, A.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Moens, P.; Bakeroot, Benoit (2018) -
ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric
Acurio, Eliana; Trojman, Lionel; De Jaeger, Brice; Bakeroot, Benoit; Decoutere, Stefaan (2021) -
Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs
Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Hu, Jie; Stoffels, Steve; Decoutere, Stefaan (2016) -
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit; Tallarico, Andrea Natale; Sangiorgi, Enrico; Fiegna, Claudio; Zheng, Jiaxin; Ma, X.; Borga, Matteo; Fabris, Elena; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Priesol, Juraj; Satka, Alexander (2019-04) -
Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs
Wu, Tian-Li; Franco, Jacopo; Marcon, Denis; De Jaeger, Brice; Bakeroot, Benoit; Kang, Xuanwu; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2016) -
Reliability in GaN-based devices for power applications
Acurio Mendez, Eliana; Trojman, Lionel; Crupi, Felice; Iucolano, Ferdinando; Ronchi, Nicolo; De Jaeger, Brice; Bakeroot, Benoit; Decoutere, Stefaan (2018) -
Si trench around drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance
Srivastava, Puneet; Oprins, Herman; Van Hove, Marleen; Das, Jo; Malinowski, Pawel; Bakeroot, Benoit; Marcon, Denis; Visalli, Domenica; Kang, Xuanwu; Lenci, Silvia; Geens, Karen; Viaene, John; Cheng, Kai; Leys, Maarten; De Wolf, Ingrid; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2011) -
Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology
Gallardo, Jethro Oroceo; De Jaeger, Brice; Dash, Sachidananda; Tang, Shun-Wei; Tran, Thanh Nga; Wellekens, Dirk; Bakeroot, Benoit; Decoutere, Stefaan; Wu, Tian-Li (2021) -
Study of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes
Hu, Jie; Stoffels, Steve; Lenci, Silvia; Wu, Tian-Li; Ronchi, Nicolo; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan (2014)