Browsing Conference contributions by imec author "a3e793245a8929ea03475a8a62c9583a2557cb56"
Now showing items 41-50 of 50
-
Study of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes
Hu, Jie; Stoffels, Steve; Lenci, Silvia; Wu, Tian-Li; Ronchi, Nicolo; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan (2014) -
TCAD methodology for simulation of GaN-HEMT power devices
Strauss, Stephan; Axel, Erlebach; Tommaso, Cilento; Bakeroot, Benoit; Marcon, Denis; Stoffels, Steve (2014-06) -
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron
Stockman, Arno; Uren, Michael; Tajalli, Alaleh; Meneghini, Matteo; Bakeroot, Benoit; Moens, Peter (2017) -
The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate
Wu, Tian-Li; Marcon, Denis; De Jaeger, Brice; Van Hove, Marleen; Bakeroot, Benoit; Lin, Dennis; Stoffels, Steve; Kang, Xuanwu; Roelofs, Robin; Groeseneken, Guido; Decoutere, Stefaan (2015) -
The influence of carbon in the back-barrier layers on the surface electric field peaks in GaN Schottky diodes
Bakeroot, Benoit; De Jaeger, Brice; Ronchi, Nicolo; Stoffels, Steve; Zhao, Ming; Decoutere, Stefaan (2018) -
Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs
Stockman, Arno; Canato, Eleonora; Meneghini, Matteo; Meneghesso, Gaudenzio; Moens, Peter; Bakeroot, Benoit (2019) -
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics of AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs
Wu, Tian-Li; Marcon, Denis; De Jaeger, Brice; Van Hove, Marleen; Bakeroot, Benoit; Stoffels, Steve; Groeseneken, Guido; Decoutere, Stefaan; Roelofs, Robin (2015) -
Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate
Bakeroot, Benoit; Stoffels, Steve; Posthuma, Niels; Wellekens, Dirk; Decoutere, Stefaan (2019) -
Using adaptive resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors
Bakeroot, Benoit; Moens, P.; Vermandel, Miguel; Doutreloigne, Jan (2001) -
Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices
Bakeroot, Benoit; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan (2020)