Browsing Conference contributions by author "Fazan, Pierre"
Now showing items 1-20 of 29
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80nm tall thermally stable cost effective FinFETs for advanced DRAM periphery devices for AI/ML and Automotive applications
Spessot, Alessio; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto (2020) -
A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologies
Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Caillat, Christian; Cho, Moon Ju; Simoen, Eddy; Aoulaiche, Marc; Albert, Johan; Chew, Soon Aik; Noh, Kyung Bong; Son, Yunik; Fazan, Pierre; Horiguchi, Naoto; Thean, Aaron (2014) -
Advanced doping techniques for DRAM peripheral MOSFETs
Spessot, Alessio; Ritzenthaler, Romain; Schram, Tom; Aoulaiche, Marc; Cho, Moon Ju; Toledano Luque, Maria; Fazan, Pierre (2015) -
Assessment of SiGe quantum well transistors for DRAM peripheral applications
Ritzenthaler, Romain; Schram, Tom; Eneman, Geert; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Spessot, Alessio; Aoulaiche, Marc; Fazan, Pierre; Noh, Kyung Bong; Son, Yunik (2015) -
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery
Bastos, Joao; O'Sullivan, Barry; Franco, Jacopo; Tyaginov, Stanislav; Truijen, Brecht; Vaisman Chasin, Adrian; Degraeve, Robin; Kaczer, Ben; Ritzenthaler, Romain; Capogreco, Elena; Dentoni Litta, Eugenio; Spessot, Alessio; Higashi, Yusuke; Yoon, Younggwang; Machkaoutsan, Vladimir; Fazan, Pierre; Horiguchi, Naoto (2022) -
Cost effective FinFET platform for stand alone DRAM 1Y and beyond memory periphery
Spessot, Alessio; Sharan, Neha; Oh, Hyungrock; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Mallik, Arindam; De Keersgieter, An; Parvais, Bertrand; Sherazi, Yasser; Machkaoutsan, Vladimir; Kim, Cheolgyu; Fazan, Pierre; Mocuta, Dan; Mocuta, Anda; Horiguchi, Naoto (2018-01) -
Floating body retention analysis for 1T-DRAM
Aoulaiche, Marc; Simoen, Eddy; Witters, Liesbeth; Claeys, Cor; Jurczak, Gosia; Nicoletti, Talitha; dos Santos, Sara; Martino, Jao Martino; Caillat, Christian; Fazan, Pierre (2013) -
Gate stack engineering to enhance high- $j/metal gate reliability for DRAM I/O applications
O'Sullivan, Barry; Ritzenthaler, Romain; Simoen, Eddy; Dentoni Litta, Eugenio; Schram, Tom; Vaisman Chasin, Adrian; Linten, Dimitri; Horiguchi, Naoto; Machkaoutsan, Vladimir; Fazan, Pierre; Li, Y (2017) -
Gate-stack engineered NBTI improvements in high-voltage logic-for-memory high-k/metal gate devices
O'Sullivan, Barry; Ritzenthaler, Romain; Rzepa, G; Wu, Zhicheng; Dentoni Litta, Eugenio; Richard, Olivier; Conard, Thierry; Machkaoutsan, Vladimir; Fazan, Pierre; Kim, Cheolgyu; Franco, Jacopo; Kaczer, Ben; Grasser, T; Spessot, Alessio; Linten, Dimitri; Horiguchi, Naoto (2019) -
I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration
Ritzenthaler, Romain; Schram, Tom; Cho, Moon Ju; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Spessot, Alessio; Caillat, Christian; Aoulaiche, Marc; Fazan, Pierre; Noh, Kyung Bong; Son, Yunik (2015) -
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors
Aoulaiche, Marc; Federico, Antonio; Simoen, Eddy; Ritzenthaler, Romain; Schram, Tom; Arimura, Hiroaki; Cho, Moon Ju; Kauerauf, Thomas; Crupi, Felice; Spessot, Alessio; Caillat, Christian; Fazan, Pierre; Na, Hoon Joo; Son, Yunik; Noh, Kyung Bong; Groeseneken, Guido; Horiguchi, Naoto; Thean, Aaron (2013) -
Impact of DRAM process flow on the performance of periphery devices for next generation mobile applications
Spessot, Alessio; Caillat, Christian; Srividya, Vidya; Fazan, Pierre; Schram, Tom; Mitard, Jerome (2011) -
Impact of fin height on bias temperature instability of memory periphery FinFETs
Boubaaya, Mohamed; O'Sullivan, Barry; Franco, Jacopo; Dentoni Litta, Eugenio; Ritzenthaler, Romain; Dupuy, Emmanuel; Machkaoutsan, Vladimir; Fazan, Pierre; Cheolgyu Kim, Cheolgyu; Spessot, Alessio; Linten, Dimitri; Horiguchi, Naoto (2019) -
Impact of thermal budget on the low-frequency noise of DRAM peripheral nMOSFETs
Simoen, Eddy; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Aoulaiche, Marc; Fazan, Pierre; Na, Hoon Joo; Lee, Sun Ghil; Son, Yunik; Noh, Kyung Bong; Horiguchi, Naoto; Thean, Aaron; Claeys, Cor (2015) -
Improving the low-frequency noise performance of input/output DRAM peripheral pMOSFETs
Simoen, Eddy; O'Sullivan, Barry; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Schram, Tom; Fazan, Pierre; Ji, Yunhyuck; Linten, Dimitri; Horiguchi, Naoto (2017) -
Increase in oxide trap density due to the implementation of high-k and Al2O3 cap layers in thick-oxide input-output transistors for DRAM applications
Simoen, Eddy; Ritzenthaler, Romain; Cho, Moon Ju; Schram, Tom; Horiguchi, Naoto; Aoulaiche, Marc; Spessot, Alessio; Fazan, Pierre; Claeys, Cor (2015) -
Insights in low frequency noise of advanced and high-mobility channel transistors
Simoen, Eddy; Romeo, Tomasso; Luque Rodriguez, Abraham; Jimenez Tejada, Juan Antonio; Aoulaiche, Marc; Veloso, Anabela; Jurczak, Gosia; Mitard, Jerome; Caillat, Christian; Fazan, Pierre; Crupi, Felice; Claeys, Cor (2012) -
Low frequency noise of advanced memory devices
Simoen, Eddy; Ritzenthaler, Romain; Schram, Tom; Horiguchi, Naoto; Jurczak, Gosia; Thean, Aaron; Claeys, Cor; Aoulaiche, Marc; Spessot, Alessio; Fazan, Pierre (2015) -
Low-frequency noise analysis of DRAM peripheral transistors with La cap
Simoen, Eddy; Ritzenthaler, Romain; Schram, Tom; Aoulaiche, Marc; Spessot, Alessio; Fazan, Pierre; Na, Hai Sub; Son, Yunik; Noh, Kyung Bong; Arimura, Hiroaki; Horiguchi, Naoto; Thean, Aaron; Claeys, Cor (2014) -
Low-power DRAM-compatible replacement gate high-k/metal gate stacks
Ritzenthaler, Romain; Schram, Tom; Bury, Erik; Mitard, Jerome; Ragnarsson, Lars-Ake; Groeseneken, Guido; Horiguchi, Naoto; Thean, Aaron; Spessot, Alessio; Caillat, Christian; Srividya, Vidya; Fazan, Pierre (2012)