Browsing Conference contributions by imec author "668c9257fa3a28e612560d290c63fa62b21f696d"
Now showing items 21-40 of 70
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Engineering of Hf1-xAlxOy amorphous dielectrics for high-performance RRAM applications
Fantini, Andrea; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Adelmann, Christoph; Polimeni, Giuseppe; Chen, Yangyin; Komura, Masanori; Belmonte, Attilio; Wouters, Dirk; Jurczak, Gosia (2014) -
Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors
Degraeve, Robin; Chai, Zheng; Zhang, W; Clima, Sergiu; Hatem, F; Zhang, JF; Freitas, P; Marsland, J; Fantini, Andrea; Garbin, Daniele; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Fast and stable sub-10μA pulse operation in W/SiO2/Ta/Cu 90nm 1T1R CBRAM
Belmonte, Attilio; Fantini, Andrea; Degraeve, Robin; Celano, Umberto; Vandervorst, Wilfried; Redolfi, Augusto; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2015) -
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
Goux, Ludovic; Sankaran, Kiroubanand; Kar, Gouri Sankar; Jossart, Nico; Opsomer, Karl; Degraeve, Robin; Pourtois, Geoffrey; Rignanese, G.-M.; Detavernier, C.; Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Govoreanu, Bogdan; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith; Kittl, Jorge (2012) -
First-principles thermodynamic and kinetic aspects of the switching in Cu-based and HfOx-based RRAM stacks
Clima, Sergiu; Sankaran, Kiroubanand; Degraeve, Robin; Chen, Yangyin; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2014) -
Gait identification using stochastic OXRRAM-based time sequence machine learning
Degraeve, Robin; Doevenspeck, Jonas; Fantini, Andrea; Debacker, Peter; Linten, Dimitri; Verkest, Diederik (2019) -
Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers
Avasarala, Naga Sruti; Donadio, Gabriele Luca; Witters, Thomas; Opsomer, Karl; Govoreanu, Bogdan; Fantini, Andrea; Clima, Sergiu; Oh, Hyungrock; Kundu, Shreya; Devulder, Wouter; van der Veen, Marleen; Van Houdt, Jan; Heyns, Marc; Goux, Ludovic; Kar, Gouri Sankar (2018) -
Hf cap thickness dependence in bipolar-switching TiN\HfO2\Hf\TiN RRAM
Chen, Yangyin; Pourtois, Geoffrey; Clima, Sergiu; Goux, Ludovic; Govoreanu, Bogdan; Fantini, Andrea; Degraeve, Robin; Kar, Gouri Sankar; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Hf cap thickness dependence in bipolar-switching TiN\HfO2\Hf\TiN RRAM device
Chen, Yangyin; Pourtois, Geoffrey; Clima, Sergiu; Govoreanu, Bogdan; Goux, Ludovic; Fantini, Andrea; Degraeve, Robin; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2012) -
Hourglass concept for RRAM: a dynamic and statistical device model
Degraeve, Robin; Fantini, Andrea; Raghavan, Nagarajan; Goux, Ludovic; Clima, Sergiu; Chen, Yang-Yin; Belmonte, Attilio; Cosemans, Stefan; Govoreanu, Bogdan; Wouters, Dirk; Roussel, Philippe; Kar, Gouri Sankar; Groeseneken, Guido; Jurczak, Gosia (2014) -
Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current
Chen, Yangyin; Komura, Masanori; Degraeve, Robin; Govoreanu, Bogdan; Goux, Ludovic; Fantini, Andrea; Raghavan, Naga; Clima, Sergiu; Zhang, Leqi; Belmonte, Attilio; Redolfi, Augusto; Kar, Gouri Sankar; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Intrinsic program instability in HfO2 RRAM and consequences on program algorithms
Fantini, Andrea; Gorine, Georgi; Degraeve, Robin; Goux, Ludovic; Chen, Michael; Redolfi, Augusto; Clima, Sergiu; Cabrini, Alessandro; Torelli, Guido; Jurczak, Gosia (2015) -
Intrinsic switching behavior in HfO2 RRAM by fast electrical measurments on novel 2R test structures
Fantini, Andrea; Wouters, Dirk; Degraeve, Robin; Goux, Ludovic; Pantisano, Luigi; Kar, Gouri Sankar; Chen, Yangyin; Govoreanu, Bogdan; Kittl, Jorge; Altimime, Laith; Jurczak, Gosia (2012) -
Intrinsic switching variability in HfO2 RRAM: A theoretical and experimental study
Fantini, Andrea; Goux, Ludovic; Degraeve, Robin; Wouters, Dirk; Raghavan, Praveen; Kar, Gouri Sankar; Belmonte, Attilio; Chen, Yangyin; Govoreanu, Bogdan; Jurczak, Gosia (2013) -
Lateral and vertical scaling impact on statistical performances and reliability of 10nm TiN/Hf(Al)O/Hf/TiN RRAM devices
Fantini, Andrea; Goux, Ludovic; Redolfi, Augusto; Degraeve, Robin; Kar, Gouri Sankar; Chen, Yangyin; Jurczak, Gosia (2014) -
Low voltage transient RESET kinetic modeling of OxRRAM for neuromorphic applications
Doevenspeck, Jonas; Degraeve, Robin; Fantini, Andrea; Debacker, Peter; Verkest, Diederik; Lauwereins, Rudy; Dehaene, Wim (2019) -
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability
Raghavan, Naga; Degraeve, Robin; Fantini, Andrea; Goux, Ludovic; Strangio, Sebastiano; Govoreanu, Bogdan; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia (2013) -
Modeling and spectroscopy of ovonic threshold switching defects
Degraeve, Robin; Ravsher, Taras; Kabuyanagi, Shoichi; Fantini, Andrea; Clima, Sergiu; Garbin, Daniele; Kar, Gouri Sankar (2021) -
Modeling RRAM SET and RESET statistics with guidelines for optimized operation
Degraeve, Robin; Fantini, Andrea; Raghavan, Naga; Chen, Yangyin; Goux, Ludovic; Clima, Sergiu; Cosemans, Stefan; Govoreanu, Bogdan; Wouters, Dirk; Roussel, Philippe; Kar, Gouri Sankar; Groeseneken, Guido; Jurczak, Gosia (2013) -
Monolithically integrated 1TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate
Lebanov, Ana; Fantini, Andrea; Degraeve, Robin; Nag, Manoj; Willegems, Myriam; Smout, Steve; Steudel, Soeren; Genoe, Jan; Heremans, Paul; Myny, Kris (2018)