Browsing Conference contributions by imec author "968d27ca5a622e7349851f29d50c00ca7c024c2c"
Now showing items 21-37 of 37
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Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si
Arimura, Hiroaki; Wostyn, Kurt; Ragnarsson, Lars-Ake; Capogreco, Elena; Vaisman Chasin, Adrian; Conard, Thierry; Brus, Stephan; Favia, Paola; Franco, Jacopo; Mitard, Jerome; Demuynck, Steven; Horiguchi, Naoto (2019) -
Ge:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devices
Vohra, Anurag; Porret, Clément; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger (2018) -
Ge:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devices
Vohra, Anurag; Porret, Clément; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger (2019) -
High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-30 nm Lg
Capogreco, Elena; Arimura, Hiroaki; Vohra, Anurag; Porret, Clément; Loo, Roger; De Keersgieter, An; Dupuy, Emmanuel; Marinov, Daniil; Hikavyy, Andriy; Sebaai, Farid; Mannaert, Geert; Ragnarsson, Lars-Ake; Siew, Yong Kong; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Altamirano Sanchez, Efrain; Holsteyns, Frank; Demuynck, Steven; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine; Horiguchi, Naoto (2019) -
Integration and electrical evaluation of Epi-Si and Epi-SiGe channels for 3D NAND memory applications
Capogreco, Elena; Degraeve, Robin; Lisoni, Judit; Luong, Vu; Arreghini, Antonio; Toledano Luque, Maria; Hikavyy, Andriy; Numata, Toshinori; De Meyer, Kristin; Van den Bosch, Geert; Van Houdt, Jan (2015) -
Investigation of conduction variability in MOVPE In1-xGaxAs channels for vertical NAND memory
Capogreco, Elena; Arreghini, Antonio; Lisoni, Judit Gloria; Kunert, Bernardette; Guo, Weiming; De Meyer, Kristin; Van den Bosch, Geert; Van Houdt, Jan; Furnemont, Arnaud (2016) -
Laser thermal anneal of polysilicon channel to boost 3D memory performance
Lisoni, Judit; Arreghini, Antonio; Congedo, Gabriele; Toledano Luque, Maria; Toqué-Trésonne, Inès; Huet, Karim; Capogreco, Elena; Liu, Lifang; Tan, Chi Lim; Degraeve, Robin; Van den Bosch, Geert; Van Houdt, Jan (2014) -
MOVPE In1-xGaxAs high mobility channel for 3-D NAND memory
Capogreco, Elena; Lisoni, Judit; Arreghini, Antonio; Subirats, Alexandre; Kunert, Bernardette; Guo, Weiming; Maurice, Thibaut; Tan, Chi Lim; Degraeve, Robin; De Meyer, Kristin; Van den Bosch, Geert; Van Houdt, Jan (2015) -
Nanobeam diffraction strain analysis of released Ge gate-all-around nano-wires: challenges and limitations
Favia, Paola; Witters, Liesbeth; Capogreco, Elena; Vancoille, Eric; Bender, Hugo (2018) -
SiGe channel formation for 3D vertical channel transistor applications
Capogreco, Elena; Lisoni, Judit; Hikavyy, Andriy; Arreghini, Antonio; Vecchio, Emma; Numata, Toshinori; Tan, Chi Lim; De Meyer, Kristin; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Source/drain materials for Ge nMOS devices
Vohra, Anurag; Porret, Clément; Rosseel, Erik; Hikavyy, Andriy; Capogreco, Elena; Horiguchi, Naoto; Loo, Roger; Vandervorst, Wilfried (2019-10) -
Source/drain materials for Ge nMOS devices
Vohra, Anurag; Porret, Clément; Rosseel, Erik; Hikavyy, Andriy; Capogreco, Elena; Horiguchi, Naoto; Loo, Roger; Vandervorst, Wilfried (2019) -
TEM investigation of gate-all-around nanowire devices
Favia, Paola; Arimura, Hiroaki; Capogreco, Elena; Eneman, Geert; Mertens, Hans; Hikavyy, Andriy; Richard, Olivier; Witters, Liesbeth; Kundu, Paromita; Loo, Roger; Vancoille, Eric; Bender, Hugo (2019) -
Thermally stable, packaged aware LV HKMG platforms benchmark to enable low power I/O for next 3D NAND generations
Spessot, Alessio; Salahuddin, Shairfe Muhammad; Escobar Gavilanez, Ricardo; Ritzenthaler, Romain; Xiang, Yang; Budhwani, Rahul Kumar; Dentoni Litta, Eugenio; Capogreco, Elena; Bastos, Joao; Chen, Yangyin; Horiguchi, Naoto (2022) -
Toward high-performance and reliable Ge channel devices for 2 nm node and beyond
Arimura, Hiroaki; Capogreco, Elena; Vohra, Anurag; Porret, Clément; Loo, Roger; Rosseel, Erik; Hikavyy, Andriy; Cott, Daire; Boccardi, Guillaume; Witters, Liesbeth; Eneman, Geert; Mitard, Jerome; Collaert, Nadine; Horiguchi, Naoto (2020) -
Understanding and physical modeling superior hot-carrier reliability of Ge pNWFETs
Tyaginov, Stanislav; El-Sayed, Al-Moatasem; Makarov, Alexander; Vaisman Chasin, Adrian; Arimura, Hiroaki; Vandemaele, Michiel; Jech, Markus; Capogreco, Elena; Witters, Liesbeth; Grill, Alexander; De Keersgieter, An; Eneman, Geert; Linten, Dimitri; Kaczer, Ben (2019) -
Understanding the intrinsic reliability behavior of n-/p-Si and p-Ge nanowire FETs utilizing degradation maps
Vaisman Chasin, Adrian; Bury, Erik; Franco, Jacopo; Kaczer, Ben; Vandemaele, Michiel; Arimura, Hiroaki; Capogreco, Elena; Witters, Liesbeth; Ritzenthaler, Romain; Mertens, Hans; Horiguchi, Naoto; Linten, Dimitri (2018)