Recently added

First-principles thermodynamic and kinetic aspects of the switching in Cu-based and HfOx-based RRAM stacks

Clima, Sergiu; Sankaran, Kiroubanand; Degraeve, Robin; Chen, Yangyin; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2014)

Low frequency noise characterization of advanced and end of the roadmap devices

Claeys, Cor; Simoen, Eddy (2014)

Non silicon CMOS devices: research curiosity or key to future products?

Claeys, Cor; Mitard, Jerome; Hellings, Geert; Eneman, Geert; De Jaeger, Brice; Witters, Liesbeth; Loo, Roger; Delabie, Annelies; Sioncke, Sonja; Caymax, Matty; Simoen, Eddy (2014)

Large-scale characterization of silicon nitride-based evanescent couplers at 532nm wavelength

Claes, Tom; Jansen, Roelof; Neutens, Pieter; Du Bois, Bert; Helin, Philippe; Severi, Simone; Van Dorpe, Pol; Deshpande, Paru; Rottenberg, Xavier (2014)

Influence of porosity on electrical properties of low-k dielectrics irradiated with vacuum ultraviolet radiation

Choudhury, Faraz; de Marneffe, Jean-Francois; Baklanov, Mikhaïl; Nishi, Y.; Shohet, J.L (2014)

Scalable LTE interference mitigation solution for HetNet deployment

Chiumento, Alessandro; Pollin, Sofie; Desset, Claude; Van der Perre, Liesbet; Lauwereins, Rudy (2014)

Exploiting transport-block constraints in LTE improves downlink performance

Chiumento, Alessandro; Pollin, Sofie; Desset, Claude; Van der Perre, Liesbet; Lauwereins, Rudy (2014)

The value of feedback for LTE resource allocation

Chiumento, Alessandro; Desset, Claude; Pollin, Sofie; Van der Perre, Liesbet; Lauwereins, Rudy (2014)

Multi-objective genetic algorithm downlink resource allocation in LTE: exploiting the cell-edge vs. cell-center trade-off

Chiumento, Alessandro; Blanch, Carolina; Desset, Claude; Pollin, Sofie; Van der Perre, Liesbet; Lauwereins, Rudy (2014)

3D stacking induced mechanical stress effects

Cherman, Vladimir; Van der Plas, Geert; De Vos, Joeri; Ivankovic, Andrej; Lofrano, Melina; Simons, Veerle; Gonzalez, Mario; Vanstreels, Kris; Wang, Teng; Daily, Robert; Guo, Wei; Beyer, Gerald; La Manna, Antonio; De Wolf, Ingrid; Beyne, Eric (2014)

Soft conductive polymer dry electrodes for high-quality and comfortable ECG/EEG measurements

Chen, Yun-Hsuan; Op de Beeck, Maaike; Vanderheyden, Luc; Vanstreels, Kris; Vandormael, Herman; Van Hoof, Chris (2014)

Soft, comfortable polymer dry electrodes for high quality ECG and EEG recording

Chen, Yun-Hsuan; Op de Beeck, Maaike; Vanderheyden, Luc; Carrette, Evelien; Mihajlovic, Vojkan; Vanstreels, Kris; Grundlehner, Bernard; Gadeyne, Stefanie; Boon, Paul; Van Hoof, Chris (2014)

Polymer-based dry electrodes for high user comfort ECG/EEG measurements

Chen, Yun-Hsuan; Op de Beeck, Maaike; Carrette, Evelien; Vanderheyden, Luc; Van Hoof, Chris (2014)

Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants

Chen, Yangyin; Roelofs, Robin; Redolfi, Augusto; Degraeve, Robin; Crotti, Davide; Fantini, Andrea; Clima, Sergiu; Govoreanu, Bogdan; Komura, Masanori; Goux, Ludovic; Zhang, Leqi; Belmonte, Attilio; Xie, Qi; Maes, Jan; Pourtois, Geoffrey; Jurczak, Gosia (2014)

Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate

Chen, Shih-Hung; Linten, Dimitri; Scholz, Mirko; Hellings, Geert; Boschke, Roman; Groeseneken, Guido; Huang, S.-H.; Ker, M.-D. (2014)

Gated and STI defined ESD diodes in advanced bulk FinFET technologies

Chen, Shih-Hung; Linten, Dimitri; Lee, J.-W.; Scholz, Mirko; Hellings, Geert; Sibaja-Hernandez, Arturo; Boschke, Roman; Song, M.-H.; See, Y.; Groeseneken, Guido; Thean, Aaron (2014)

Impacts of process options on ESD device characteristics in sub-20nm bulk FinFET technology nodes

Chen, Shih-Hung; Lee, Jam-Wem; Linten, Dimitri; Scholz, Mirko; Song, Ming-Hsiang; Hellings, Geert; Boschke, Roman; Sibaja-Hernandez, Arturo; Groeseneken, Guido (2014-12)

Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta2O5 RRAM cells

Chen, Michael; Goux, Ludovic; Fantini, Andrea; Redolfi, Augusto; Clima, Sergiu; Degraeve, Robin; Chen, Yangyin; Jurczak, Gosia (2014)

Low-voltage, high-sensitivity 10 Gb/s Ge avalanche photodetectors

Chen, Hongtao; Verheyen, Peter; Rakowski, Michal; De Heyn, Peter; Lepage, Guy; De Coster, Jeroen; Absil, Philippe; Roelkens, Gunther; Van Campenhout, Joris (2014)

Low-voltage Ge avalanche photodetector for highly sensitive 10Gb/s Si photonic receivers

Chen, Hongtao; Verheyen, Peter; Rakowski, Michal; De Heyn, Peter; Lepage, Guy; De Coster, Jeroen; Absil, Philippe; Roelkens, Gunther; Van Campenhout, Joris (2014)

Conference contributions: Recent submissions

First-principles thermodynamic and kinetic aspects of the switching in Cu-based and HfOx-based RRAM stacks ﻿

Low frequency noise characterization of advanced and end of the roadmap devices ﻿

Non silicon CMOS devices: research curiosity or key to future products? ﻿

Large-scale characterization of silicon nitride-based evanescent couplers at 532nm wavelength ﻿

Influence of porosity on electrical properties of low-k dielectrics irradiated with vacuum ultraviolet radiation ﻿

Scalable LTE interference mitigation solution for HetNet deployment ﻿

Exploiting transport-block constraints in LTE improves downlink performance ﻿

The value of feedback for LTE resource allocation ﻿

Multi-objective genetic algorithm downlink resource allocation in LTE: exploiting the cell-edge vs. cell-center trade-off ﻿

3D stacking induced mechanical stress effects ﻿

Soft conductive polymer dry electrodes for high-quality and comfortable ECG/EEG measurements ﻿

Soft, comfortable polymer dry electrodes for high quality ECG and EEG recording ﻿

Polymer-based dry electrodes for high user comfort ECG/EEG measurements ﻿

Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants ﻿

Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate ﻿

Gated and STI defined ESD diodes in advanced bulk FinFET technologies ﻿

Impacts of process options on ESD device characteristics in sub-20nm bulk FinFET technology nodes ﻿

Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta2O5 RRAM cells ﻿

Low-voltage, high-sensitivity 10 Gb/s Ge avalanche photodetectors ﻿

Low-voltage Ge avalanche photodetector for highly sensitive 10Gb/s Si photonic receivers ﻿