Recently added

Design compliance for Spacer Is Dielectric (SID) patterning

Luk-Pat, Gerard; Miloslavsky, Alex; Painter, Ben; Lin, Li; De Bisschop, Peter; Lucas, Kevin (2012)

Plasma damage and restoration of a spin-on organic ultra low-k material (k=2.3)

Lukaszewicz, Mikolaj; de Marneffe, Jean-Francois; Wilson, Chris; Zhang, Liping; Peng, Hsing-Ying; Verdonck, Patrick; Baklanov, Mikhaïl (2012)

Model calibration and validation for pre-production EUVL

Lorusso, Gian; Van de Kerkhove, Jeroen; De Bisschop, Peter; Hendrickx, Eric; Jiang, J.; Rio, David; Liu, W.; Liu, H. (2012)

Epitaxial growth in advanced SiGe and Ge MOS devices: challenges and solutions

Loo, Roger; Vincent, Benjamin; Hikavyy, Andriy; Gencarelli, Federica; Eneman, Geert; Witters, Liesbeth; Mitard, Jerome; Hellings, Geert; Sioncke, Sonja; Bender, Hugo; Eyben, Pierre; Caymax, Matty; Vandervorst, Wilfried; Thean, Aaron (2012-09)

Ge1-xSnx materials: challenges and applications

Loo, Roger; Vincent, Benjamin; Gencarelli, Federica; Merckling, Clement; Kumar, Arul; Eneman, Geert; Witters, Liesbeth; Vandervorst, Wilfried; Caymax, Matty; Heyns, Marc; Thean, Aaron (2012-10)

GeSn materials: challenges and applications

Loo, Roger; Vincent, Benjamin; Gencarelli, Federica; Eneman, Geert; Simoen, Eddy; Witters, Liesbeth; Caymax, Matty; Thean, Aaron (2012-10)

Epitaxial growth in advanced MOS devices: challenges and solutions

Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin; Gencarelli, Federica; Witters, Liesbeth; Mitard, Jerome; Hellings, Geert; Sioncke, Sonja; Caymax, Matty; Bender, Hugo; Simoen, Eddy; Eneman, Geert; Vandervorst, Wilfried; Thean, Aaron (2012-05)

Ultra-low power FSK receiver for body area networks with automatic frequency control

Lont, Maarten; Milosevic, D.; van Roermund, A.H.M.; Dolmans, Guido (2012)

System considerations for low power design in wireless body area networks

Lont, Maarten; Kiyani, Nauman; Dolmans, Guido (2012)

A calibrated FEM study of the influence of line width, line spacing and dielectric E modulus on stress and stress gradients in BEOL copper interconnects

Lofrano, Melina; Wilson, Chris; Croes, Kristof (2012)

Fully tunable microwave photonic phase shifter for broadband signals based on a single heterogeneously integrated III-V-on-silicon microdisk resonator

Lloret, J.; Ramos, F.; Sales, S.; Capmany, J.; Morthier, Geert; Van Thourhout, Dries; Spuesens, Thijs; Olivier, N.; Fedeli, J.M. (2012)

A 2.7nJ/b multi-standard 2.3/2.4GHz polar transmitter for wireless sensor networks

Liu, Yao-Hong; Huang, Xiongchuan; Vidojkovic, Maja; Imamura, Koji; Harpe, Pieter; Dolmans, Guido; de Groot, Harmke (2012)

Library tuning for subthreshold operation

Liu, Bo; Pineda de Gyvez, Jose; Ashouei, Maryam (2012)

Standard cell sizing for subthreshold operation

Liu, Bo; Ashouei, Maryam; Huisken, Jos; Pineda de Gyvez, Jose (2012)

Metal gates and high-k interpoly dielectrics for hybrid floating gate memory applications

Lisoni, Judit; Cacciato, Antonio; Schram, Tom; Breuil, Laurent; Blomme, Pieter; Van Houdt, Jan (2012)

High-k dielectrics for hybrid floating gate memory applications

Lisoni, Judit; Breuil, Laurent; Blomme, Pieter; Van Houdt, Jan (2012)

ESD consideration on 3D stacking integrated circuits constructed with through-silicon-via (TSV) and micro-bump structures

Linten, Dimitri; Chen, Shih-Hung (2012-07)

Conference contributions: Recent submissions

Design compliance for Spacer Is Dielectric (SID) patterning

Plasma damage and restoration of a spin-on organic ultra low-k material (k=2.3)

Model calibration and validation for pre-production EUVL

Epitaxial growth in advanced SiGe and Ge MOS devices: challenges and solutions

Ge1-xSnx materials: challenges and applications

GeSn materials: challenges and applications

Epitaxial growth in advanced MOS devices: challenges and solutions

Ultra-low power FSK receiver for body area networks with automatic frequency control

System considerations for low power design in wireless body area networks

A calibrated FEM study of the influence of line width, line spacing and dielectric E modulus on stress and stress gradients in BEOL copper interconnects

Fully tunable microwave photonic phase shifter for broadband signals based on a single heterogeneously integrated III-V-on-silicon microdisk resonator

A 2.7nJ/b multi-standard 2.3/2.4GHz polar transmitter for wireless sensor networks

Library tuning for subthreshold operation

Standard cell sizing for subthreshold operation

Metal gates and high-k interpoly dielectrics for hybrid floating gate memory applications

High-k dielectrics for hybrid floating gate memory applications

ESD consideration on 3D stacking integrated circuits constructed with through-silicon-via (TSV) and micro-bump structures

Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs

Single crystalline GeSn on silicon by solid phase crystallization

Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment

Conference contributions: Recent submissions

Design compliance for Spacer Is Dielectric (SID) patterning ﻿

Plasma damage and restoration of a spin-on organic ultra low-k material (k=2.3) ﻿

Model calibration and validation for pre-production EUVL ﻿

Epitaxial growth in advanced SiGe and Ge MOS devices: challenges and solutions ﻿

Ge1-xSnx materials: challenges and applications ﻿

GeSn materials: challenges and applications ﻿

Epitaxial growth in advanced MOS devices: challenges and solutions ﻿

Ultra-low power FSK receiver for body area networks with automatic frequency control ﻿

System considerations for low power design in wireless body area networks ﻿

A calibrated FEM study of the influence of line width, line spacing and dielectric E modulus on stress and stress gradients in BEOL copper interconnects ﻿

Fully tunable microwave photonic phase shifter for broadband signals based on a single heterogeneously integrated III-V-on-silicon microdisk resonator ﻿

A 2.7nJ/b multi-standard 2.3/2.4GHz polar transmitter for wireless sensor networks ﻿

Library tuning for subthreshold operation ﻿

Standard cell sizing for subthreshold operation ﻿

Metal gates and high-k interpoly dielectrics for hybrid floating gate memory applications ﻿

High-k dielectrics for hybrid floating gate memory applications ﻿

ESD consideration on 3D stacking integrated circuits constructed with through-silicon-via (TSV) and micro-bump structures ﻿

Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs ﻿

Single crystalline GeSn on silicon by solid phase crystallization ﻿

Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment ﻿

Design compliance for Spacer Is Dielectric (SID) patterning

Plasma damage and restoration of a spin-on organic ultra low-k material (k=2.3)

Model calibration and validation for pre-production EUVL

Epitaxial growth in advanced SiGe and Ge MOS devices: challenges and solutions

Ge1-xSnx materials: challenges and applications

GeSn materials: challenges and applications

Epitaxial growth in advanced MOS devices: challenges and solutions

Ultra-low power FSK receiver for body area networks with automatic frequency control

System considerations for low power design in wireless body area networks

A calibrated FEM study of the influence of line width, line spacing and dielectric E modulus on stress and stress gradients in BEOL copper interconnects

Fully tunable microwave photonic phase shifter for broadband signals based on a single heterogeneously integrated III-V-on-silicon microdisk resonator

A 2.7nJ/b multi-standard 2.3/2.4GHz polar transmitter for wireless sensor networks

Library tuning for subthreshold operation

Standard cell sizing for subthreshold operation

Metal gates and high-k interpoly dielectrics for hybrid floating gate memory applications

High-k dielectrics for hybrid floating gate memory applications

ESD consideration on 3D stacking integrated circuits constructed with through-silicon-via (TSV) and micro-bump structures

Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs

Single crystalline GeSn on silicon by solid phase crystallization

Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment