Browsing Articles by imec author "2fd8bca6aba9c2bd7032b2bd5bb78ad7ad6d0667"
Now showing items 1-7 of 7
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Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
Trojman, Lionel; Ragnarsson, Lars-Ake; Pantisano, Luigi; Lujan, Guilherme; Houssa, Michel; Schram, Tom; Schaekers, Marc; Van Ammel, Annemie; Groeseneken, Guido; De Gendt, Stefan; Heyns, Marc (2005-06) -
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Yu; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2013) -
Growth evolution and characterization of ultrathin CoGe2 films synthesized via catalytic solid-vapor reaction technique
Peter, Antony; Opsomer, Karl; Adelmann, Christoph; Van Ammel, Annemie; Meersschaut, Johan; Moussa, Alain; Schaekers, Marc; Wen, Liang Gong; Tokei, Zsolt; Van Elshocht, Sven (2014) -
Low temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities
Caymax, Matty; Poortmans, Jef; Van Ammel, Annemie; Libezny, Milan; Nijs, Johan; Mertens, Robert (1994) -
On the relation between low-temperature epitaxial growth conditions and the surface morphology of epitaxial Si and Si1-xGex layers, grown in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor
Caymax, Matty; Poortmans, Jef; Van Ammel, Annemie; Vanhellemont, Jan; Libezny, Milan; Nijs, Johan; Mertens, Robert (1994) -
On the thermal stability of physically-vapor-deposited diffusion barriers in 3D through-silicon vias during IC processing
Civale, Yann; Croes, Kristof; Miyamori, Yuichi; Velenis, Dimitrios; Redolfi, Augusto; Thangaraju, Sarasvathi; Van Ammel, Annemie; Cherman, Vladimir; Van der Plas, Geert; Cockburn, Andrew; Gravey, Virginie; Kumar, Nirajan; Cao, Zhitao; Travaly, Youssef; Tokei, Zsolt; Beyne, Eric; Swinnen, Bart (2013) -
W versus Co–Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes
Veloso, Anabela; Chew, Soon Aik; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Tielens, Hilde; Heylen, Nancy; Devriendt, Katia; Sebaai, Farid; Brus, Stephan; Ragnarsson, Lars-Ake; Pantisano, Luigi; Eneman, Geert; Carbonell, Laure; Richard, Olivier; Favia, Paola; Geypen, Jef; Bender, Hugo; Higuchi, Yuichi; Phatak, Anup; Thean, Aaron; Horiguchi, Naoto (2013)