Browsing Articles by imec author "42a548c9f15c160767d6f83006cf635cea6ff376"
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3D characterization of nanowire devices with STEM based modes
Bender, Hugo; Bosch, Eric G.T.; Richard, Olivier; Mendez, David; Favia, Paola; Lazic, Ivan (2019) -
A comparative study of the microstructure–dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach
Popovici, Mihaela Ioana; Tomida, Kazuyuki; Swerts, Johan; Favia, Paola; Delabie, Annelies; Bender, Hugo; Adelmann, Christoph; Tielens, Hilde; Brijs, Bert; Kaczer, Ben; Pawlak, Malgorzata; Kim, Min-Soo; Altimime, Laith; Van Elshocht, Sven; Kittl, Jorge (2011) -
A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash
Ramesh, Siva; Banerjee, Kaustuv; Opsomer, Karl; Rachita, Iuliana; Bastos, Joao; Soulie, Jean-Philippe; Sebaai, Farid; Favia, Paola; Korytov, Maxim; Richard, Olivier; Breuil, Laurent; Arreghini, Antonio; Van den Bosch, Geert; Rosmeulen, Maarten (2022) -
Advanced Raman spectroscopy using nanofocusing of light
Nuytten, Thomas; Bogdanowicz, Janusz; Hantschel, Thomas; Schulze, Andreas; Favia, Paola; Bender, Hugo; De Wolf, Ingrid; Vandervorst, Wilfried (2017) -
AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Derluyn, Joff; Sijmus, Bram; Favia, Paola; Richard, Olivier; Bender, Hugo; Germain, Marianne; Borghs, Gustaaf (2008) -
AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
Cheng, Kai; Liang, Hu; Van Hove, Marleen; Geens, Karen; De Jaeger, Brice; Srivastava, Puneet; Kang, Xuanwu; Favia, Paola; Bender, Hugo; Decoutere, Stefaan; Dekoster, Johan; del Agua Borniquel, Jose Ignacio; Jun, Sung Won; Chung, Hua (2012) -
Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
Nuytten, Thomas; Bogdanowicz, Janusz; Witters, Liesbeth; Eneman, Geert; Hantschel, Thomas; Schulze, Andreas; Favia, Paola; Bender, Hugo; De Wolf, Ingrid; Vandervorst, Wilfried (2018) -
Apparent size effects on dopant activation in nanometer-wide Si fins
Folkersma, Steven; Bogdanowicz, Janusz; Favia, Paola; Wouters, Lennaert; Petersen, Dirch Hjorth; Hansen, Ole; Henrichsen, Henrik Hartmann; Nielsen, Peter Former; Shiv, Lior; Vandervorst, Wilfried (2021) -
Argon-Milling-Induced Decoherence Mechanisms in Superconducting Quantum Circuits
Van Damme, Jacques; Ivanov, Tsvetan; Favia, Paola; Conard, Thierry; Verjauw, Jeroen; Acharya, Rohith; Perez Lozano, Daniel; Raes, B.; Van de Vondel, J.; Ananthapadmanabha Rao, Vadiraj; Mongillo, Massimo; Wan, Danny; De Boeck, Jo; Potocnik, Anton; De Greve, Kristiaan (2023) -
Atomic layer deposition of hafnium oxide on Ge and GaAs substrates: precursors and surface preparation
Delabie, Annelies; Brunco, David; Conard, Thierry; Favia, Paola; Bender, Hugo; Franquet, Alexis; Sioncke, Sonja; Vandervorst, Wilfried; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc; Kim, Eunji; McIntyre, Paul C.; Saraswat, Krishna C.; LeBeau, James M.; Cagnon, Joel; Stemmer, Susanne; Tsai, Wilman (2008) -
Buried power rail integration with FinFETs for ultimate CMOS scaling
Gupta, Anshul; Varela Pedreira, Olalla; Arutchelvan, Goutham; Zahedmanesh, Houman; Devriendt, Katia; Hanssen, Frederik; Tao, Zheng; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, Noemie; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min-Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Cousserier, Joris; Yakimets, Dmitry; Lazzarino, Frederic; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Jaysankar, Manoj; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Boemmels, Juergen; Demuynck, Steven; Tokei, Zsolt; Horiguchi, Naoto (2020) -
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode
El Kazzi, Salim; Alian, AliReza; Hsu, Brent; Verhulst, Anne; Walke, Amey; Favia, Paola; Douhard, Bastien; del Alamo, Jesus Del Alamo; Lu, Wenjie; Collaert, Nadine; Merckling, Clement (2018) -
Combined STEM-EDS tomography of nanowire structures
Bender, Hugo; Richard, Olivier; Kundu, Paromita; Favia, Paola; Zhong, Zhichao; Palenstijn, Willem Jan; Batenburg, Kees Joost; Wirix, Maarten; Kohr, Holger; Schoenmakers, Remco (2019) -
Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors
Buhler, Rudolf; Eneman, Geert; Favia, Paola; Bender, Hugo; Vincent, Benjamin; Hikavyy, Andriy; Loo, Roger; Martino, Joao; Claeys, Cor; Simoen, Eddy; Collaert, Nadine; Thean, Aaron (2014) -
Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodes
Menou, Nicolas; Popovici, Mihaela Ioana; Clima, Sergiu; Opsomer, Karl; Polspoel, Wouter; Kaczer, Ben; Rampelberg, Geert; Tomida, Kazuyuki; Pawlak, Malgorzata; Detavernier, Christophe; Pierreux, Dieter; Swerts, Johan; Maes, Jan Willem; Manger, Dirk; Badylevich, M; Afanasiev, Valeri; Conard, Thierry; Favia, Paola; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Pourtois, Geoffrey; Wouters, Dirk; Biesemans, Serge; Kittl, Jorge (2009) -
Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation
Martens, Koen; Rooyackers, Rita; Firrincieli, Andrea; Vincent, Benjamin; Loo, Roger; De Jaeger, Brice; Meuris, Marc; Favia, Paola; Bender, Hugo; Douhard, Bastien; Vandervorst, Wilfried; Simoen, Eddy; Jurczak, Gosia; Wouters, Dirk; Kittl, Jorge (2011) -
Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers
Hsu, Mark; Van Thourhout, Dries; Pantouvaki, Marianna; Meersschaut, Johan; Conard, Thierry; Richard, Olivier; Bender, Hugo; Favia, Paola; Vila Santos, Maria; Cid Barreno, Rosalia; Rubio-Zuazo, Juan; R. Castro, German; Van Campenhout, Joris; Absil, Philippe; Merckling, Clement (2017-05) -
Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n+InAs/p+GaSb NW tunneling devices
El Kazzi, Salim; Alian, AliReza; Hsu, Brent; Favia, Paola; Merckling, Clement; Lu, Wenjie; Del Alamo, Jesus; Collaert, Nadine (2018-11) -
Effect of boron doping on the wear behavior of the growth and nucleation surfaces of micro- and nanocrystalline diamond films
Buijnsters, Josephus G.; Tsigkourakos, Menelaos; Hantschel, Thomas; Gomes, Oliver; Nuytten, Thomas; Favia, Paola; Bender, Hugo; Arstila, Kai; Celis, Jean-Pierre; Vandervorst, Wilfried (2016) -
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Yu; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2013)