Browsing Presentations by imec author "0e1df8538bd7eaffb21098271e50b960a6981d04"
Now showing items 1-8 of 8
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Alternative high-k dielectrics for semiconductor applications
Van Elshocht, Sven; Adelmann, Christoph; Clima, Sergiu; Pourtois, Geoffrey; Conard, Thierry; Delabie, Annelies; Franquet, Alexis; Lehnen, Peer; Meersschaut, Johan; Menou, Nicolas; Popovici, Mihaela Ioana; Richard, Olivier; Schram, Tom; Wang, Xin Peng; Hardy, An; Dewulf, Daan; van Bael, M.K.; Blomberg, T.; Pieereux, D.; Swerts, J.; Maes, J.W.; Wouters, Dirk; De Gendt, Stefan; Kittl, Jorge (2008) -
Band edge work function metal gates using PEALD TaCN electrodes
Maes, Jan; Swerts, Johan; Pierreux, Dieter; Machkaoutsan, Vladimir; Marcus, Steven; Milligan, Brennan; Schram, Tom; Ragnarsson, Lars-Ake; Cacciato, Antonio; Rohr, Erika; Rothschild, Aude; Hendrickx, Paul; Breuil, Laurent; Van den Bosch, Geert (2009) -
Effective metal gate work function modification by ion implantation with W-based gate stack
Li, Zilan; Schram, Tom; Kerner, Christoph; Witters, Thomas; Singanamalla, Raghunath; Pourtois, Geoffrey; Paraschiv, Vasile; Hoffmann, Thomas Y.; Rohr, Erika; Absil, Philippe; De Gendt, Stefan; De Meyer, Kristin (2008) -
Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Conard, Thierry; Pantisano, Luigi; Claes, Martine; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Houssa, Michel; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Fompeyrinne, J.; Loquet, J.P. (2005) -
Molecular beam epitaxy for advanced gate stack materials and processes
Locquet, Jean-Pierre; Marchiori, Chiara; Sousa, M.; Siegwart, H.; Caimi, D.; Fompeyrine, Jean; Pantisano, Luigi; Claes, Martine; Conard, Thierry; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Houssa, Michel; Aoulaiche, Marc; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Furukawa, Yukiko; Seo, J.W.; dimoulas, A. (2005) -
MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Pantisano, Luigi; Conard, Thierry; Claes, Martine; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Houssa, Michel; Aoulaiche, Marc; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Fompereyne, Jean; Locquet, Jean-Pierre; dimoulas, A. (2005) -
Surface termination of HfO2 in W/HfO2 gated metal-oxide-semiconductor stacks from thermal stability point of view
Li, Zilan; Pourtois, Geoffrey; Schram, Tom; De Gendt, Stefan; De Meyer, Kristin (2008) -
Wafer backside cleaning strategies for high-k/metal gate processing
Vos, Rita; Kesters, Els; Garaud, Sylvain; De Waele, Rita; Kenis, Karine; Lux, Marcel; Kraus, Harald; Snow, Jim; Shamiryan, Denis; Catana, Gabriela; Deweerd, Wim; Schram, Tom; De Gendt, Stefan; Mertens, Paul (2004)