Browsing by Author "Afanas'ev, Valeri"
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Publication Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels
Journal article2014, Applied Physics Letters, (104) 20, p.202107Publication Dangling bond defects in silicon-passivated strained-Si1xGex channel layers
Journal article2020, Journal of Materials Science: Materials in Electronics, 31, p.75-79Publication Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors
Proceedings paper2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022Publication Direct measurement of barrier height at the HfO2/poly-Si interface:
Proceedings paper2004-06, VLSI Technology Symposium, 15/06/2004, p.122-123Publication Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks
Journal article2012, Applied Physics Letters, (101) 4, p.42901Publication Efficient Direct Band-Gap Transition in Germanium by Three-Dimensional Strain
Journal article2021, ACS APPLIED MATERIALS & INTERFACES, (13) 26, p.30941-30949Publication Electron photoemission from conducting nitrides (TiNx, TaNx) into SiO2 and HfO2
Journal article2005-06, Applied Physics Letters, (86) 23, p.232902-1-232902-3Publication Enhancing the quality of low temperature SiO2 by atomic hydrogen exposure for excellent NBTI reliability
Meeting abstract2020, 51st IEEE Semiconductor Interface Specialists Conference (SISC), 16/12/2020, p.12.4Publication Hole-doping induced ferromagnetism in 2D materials
Publication Metal induced charge transfer doping in graphene-ruthenium hybrid interconnects
; ; ; ; Afanas'ev, ValeriJournal article2021, CARBON, 183, p.999-1011Publication Origin of supertetragonality in BaTiO3
Journal article2022, PHYSICAL REVIEW MATERIALS, (6) 6, p.64410Publication Paramagnetic oxide defects in Sc2O3-passivated (100)Ge/HfO2 stacks
Meeting abstract2014, 45th IEEE Semiconductor Interface Specialists Conference - SISC, 10/12/2014, p.4.2Publication Paramagnetic oxide traps in Sc2O3-passivated (1 0 0) Ge/HfO2 stacks
Journal article2015, Microelectronic Engineering, 147, p.180-183Publication Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunities
Proceedings paper2021-12, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021, p.28.4.1-28.4.4Publication Polarity-Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition
Journal article2023, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, (17) 8, p.Art. 2200417Publication Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch
Journal article2023-05, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 5, p.2276-2281Publication Valence-band electron-tunneling measurement of the gate work function: application to the high-k / polycrystalline-silicon interface
Journal article2005, Journal of Applied Physics, (98) 5, p.53712