Browsing by Author "Albert, Johan"
- Results Per Page
- Sort Options
Publication 15nm half-pitch patterning: EUV + SELF-aligned double patterning
Oral presentation2012, International Symposium on Extreme Ultraviolet Lithography - EUVLPublication 15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU
Proceedings paper2013, Advanced Etch Technology for Nanopatterning II, 23/02/2013, p.86850CPublication 15nm HP patterning with EUV lithography and SADP
Meeting abstract2012, 34th International Symposium on Dry Process - DPS, 15/11/2012Publication A low-power HKMG CMOS platform compatible with DRAM node 2x and beyond
Journal article2014, IEEE Transactions on Electron Devices, (61) 8, p.2935-2943Publication A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologies
Proceedings paper2014, International Electron Devices Meeting - IEDM, 15/12/2014, p.772-775Publication Cleaning and strip requirements for metal gate based CMOS integration
; ; ; ; ;Wada, Masayuki ;Albert, JohanRohr, ErikaProceedings paper2009, Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11, 4/10/2009, p.17-28Publication Diffusion and gate replacement: a new gate-first high-k/metal gate CMOS integration scheme suppressing gate height symmetry
Journal article2016, IEEE Transactions on Electron Devices, (63) 1, p.265-271Publication Guidelines for reducing NBTI based on its correlation with effective work function studied by CV-BTI on high-k first MOS capacitors with slant etched SiO2
; ; ; ;Albert, Johan; Proceedings paper2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.3C.4.1-3C.4.6Publication Implanted photoresist remover for advanced nodes including SiGe, Ge and high k-metals
Proceedings paper2013, Ultra Clean Processing of Semiconductor Surfaces XI - UCPSS, 17/09/2012, p.17-20Publication Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning
Journal article2013-09, Journal of Micro/Nanolithography MEMS and MOEMS, (12) 4, p.41302