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Browsing by Author "Alves Donaton, Ricardo"

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    A BEEM study of PtSi Schottky contacts on ion-milled Si

    Ru, Guo-Ping
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    Detavernier, C.
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    Alves Donaton, Ricardo
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    Blondeel, A.
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    Clauws, P.
    Proceedings paper
    1999, Advanced Interconnects and Contacts, 5/04/1999, p.201-206
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    Characterization and integration in Cu damascene structures of AURORA, an inorganic low-k dielectric

    Alves Donaton, Ricardo
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    Coenegrachts, Bart  
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    Sleeckx, Erik  
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    Schaekers, Marc  
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    Sophie, Guus
    Proceedings paper
    2001, Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, 23/04/2000, p.D5.14.1-D5.14-6
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    Characterization and integration of a new Si-O-C film deposited by CVD

    Alves Donaton, Ricardo
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    Struyf, Herbert  
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    Lepage, Muriel
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    Coenegrachts, Bart  
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    Stucchi, Michele  
    Proceedings paper
    2001, Advanced Metallization Conference 2000, 3/10/2000, p.595-601
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    Characterization of ultra-thin PtSi films for infrared detectors

    Bender, Hugo  
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    Roussel, Philippe  
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    Kolodinski, Sabine
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    Torres Jacome, Alfonso
    Proceedings paper
    1996, Silicide Thin Films - Fabrication, Properties, and Applications, 27/11/1995, p.449-454
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    CoSi2Si1-xGx-interfaces for Schottky barrier infrared detectors with extended detection regime

    Kolodinski, Sabine
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    Alves Donaton, Ricardo
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    Roca, Elisenda
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    Caymax, Matty  
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    Maex, Karen  
    Proceedings paper
    1995, Growth and Characterization of Materials for Infrared Detectors II, 13/07/1995, p.175-84
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    Elimination of HF-last cleaning related CoSi2 defects formation

    Zou, Gang
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    Jonckx, Franky
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    Alves Donaton, Ricardo
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    Kuper, Werner
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    Maex, Karen  
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    Mertens, Paul  
    Proceedings paper
    1994, Proceedings of the 2nd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS, 19/09/1994, p.177-180
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    Etching of CoSi2 in HF-based solutions

    Alves Donaton, Ricardo
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    Lokere, K.
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    Verbeeck, Rita  
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    Maex, Karen  
    Journal article
    1995, Appied Surface Science, (89) 3, p.221-7
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    Focused ion beam analysis of organic low-k dielectrics

    Bender, Hugo  
    ;
    Alves Donaton, Ricardo
    Proceedings paper
    2000, Proceedings of the 26th International Symposium on Testing and Failure Analysis - ISTFA, 12/11/2000, p.397-405
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    Formation of CoSi2 on strained Si0.8Ge0.2 using a sacrificial Si layer

    Alves Donaton, Ricardo
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    Kolodinski, Sabine
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    Caymax, Matty  
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    Roussel, Philippe  
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    Bender, Hugo  
    Journal article
    1995, Applied Surface Science, 91, p.77-81
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    Influence of SiGe thickness on the Co/SiGe/Si solid state reaction

    Alves Donaton, Ricardo
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    Jin, S.
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    Bender, Hugo  
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    Maex, Karen  
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    Vantomme, Andre  
    ;
    Langouche, G.
    Proceedings paper
    1999, Advanced Interconnects and Contacts, 05/04/1999, p.151-156
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    Limitation of HF-based chemistry for deep-submicron contact hole cleaning on silicides

    Baklanov, Mikhaïl
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    Kondoh, Eiichi
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    Alves Donaton, Ricardo
    ;
    Vanhaelemeersch, Serge  
    ;
    Maex, Karen  
    Journal article
    1998, Journal of the Electrochemical Society, (145) 9, p.3240-3246
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    Mechanical analysis of a SiLK/Cu dual damascene interconnect system

    Waeterloos, Joost
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    Shaffer, E.
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    Stokich, T.
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    Alves Donaton, Ricardo
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    Maex, Karen  
    Proceedings paper
    2001, Advanced Metallization Conference 2000, 3/10/2000, p.469-473
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    Micro-characterisation of Pt silicides prepared on (100) silicon

    Jin, S.
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    Bender, Hugo  
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    Alves Donaton, Ricardo
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    Maex, Karen  
    Proceedings paper
    1997, Microscopy of Semiconducting Materials 1997, 7/04/1997, p.497-500
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    Microstructural studies by transmission electron microscopy of the formation of ultrathin PtSi layers with novel silicidation processes

    Jin, S.
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    Bender, Hugo  
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    Alves Donaton, Ricardo
    ;
    Maex, Karen  
    Journal article
    1999, Journal of Materials Research, (14) 6, p.2577-2587
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    New approaches for formation of ultra-thin PtSi layers for infrared applications

    Alves Donaton, Ricardo
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    Jin, S.
    ;
    Bender, Hugo  
    ;
    Zagrebnov, Maxim
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    Baert, Kris
    ;
    Maex, Karen  
    Proceedings paper
    1998, Rapid Thermal and Integrated Processing VII, 13/04/1998, p.307-312
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    New approaches for formation of ultra-thin PtSi layers for infrared applications

    Alves Donaton, Ricardo
    ;
    Jin, S.
    ;
    Bender, Hugo  
    ;
    Zagrebnov, Maxim
    ;
    Baert, Kris
    ;
    Maex, Karen  
    Proceedings paper
    1998, Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits, 13/04/1998, p.241
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    New process for controlled formation of ultra-thin PtSi films for infra-red detector applications

    Torres Jacome, Alfonso
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    Kolodinski, Sabine
    ;
    Alves Donaton, Ricardo
    ;
    Maex, Karen  
    Proceedings paper
    1995, Growth and Characterization of Materials for Infrared Detectors II, 13/07/1995, p.185-190
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    New technique for forming continuous, smooth and uniform ultrathin (3nm) PtSi layers

    Alves Donaton, Ricardo
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    Jin, S.
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    Bender, Hugo  
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    Conard, Thierry  
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    De Wolf, Ingrid  
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    Maex, Karen  
    Journal article
    1999, Electrochemical and Solid State Letters, (2) 4, p.195-197
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    Nondestructive characterization of thin silicides using x-ray reflectivity

    Detavernier, C.
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    De Gryse, R.
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    Van Meirhaeghe, R. L.
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    Cardon, F.
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    Ru, Guo-Ping
    ;
    Qu, Xin-Ping
    Journal article
    2000, J. Vacuum Science and Technology A, (A18) 2, p.470-476
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    Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric films

    Alves Donaton, Ricardo
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    Iacopi, Francesca
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    Baklanov, Mikhaïl
    ;
    Shamiryan, Denis
    Proceedings paper
    2000, Proceedings of the IEEE 2000 International Interconnect Technology Conference, 5/06/2000, p.93-95
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