Browsing by Author "Amat, E."
- Results Per Page
- Sort Options
Publication Aging mechanisms in strained Si/high-k based pMOS transistors. Implications in CMOS circuits
Proceedings paper2011, 8th Spanish Conference on Electron Devices - CDE, 8/02/2011Publication Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain
Proceedings paper2010, International Conference on Solid-State and Integrated Circuit Technology, 1/11/2010Publication Channel hot-carrier degradation under static stress in short channel transistors with high-k/metal gate stacks
Proceedings paper2008, 9th International Conference on ULtimate Integration on Silicon - ULIS, 12/03/2008, p.103-106Publication CHC degradation of strained devices based on SiON and high-k gate dielectric materials
;Amat, E. ;Rodriguez, R. ;Bargallo Gonzalez, Mireia ;Martin-Martinez, J. ;Nafria, M.Aymerich, X.Journal article2011, Microelectronic Engineering, (88) 7, p.1408-1411Publication NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance
Journal article2011, Microelectronic Engineering, (88) 7, p.1384-1387Publication Processing dependences of channel hot-carrier degradation on strained-S- p-channel metal-oxide semiconductor field-effect transistors
;Amat, E. ;Martin-Martinez, J. ;Bargallo Gonzalez, Mireia ;Rodriguez, R. ;Nafria, M.Aymerich, X.Journal article2011, Journal of Vacuum Science and Technology B, (29) 1, p.01AB07Publication SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors
Journal article2010, Microelectronics Reliability, (50) 9_11, p.1263-1266Publication Understanding and optimization of hot-carrier reliability in germanium-on-silicon pMOSFETs
Journal article2009, IEEE Transactions on Electron Devices, (56) 5, p.1063-1069