Browsing by Author "Arnoldi, Laurent"
- Results Per Page
- Sort Options
Publication 3D dopant profiling in silicon nanowires
Oral presentation2016, European Atom Probe Tomography WorkshopPublication Accurate stoichiometric analysis of Al1 xGaxN/GaN structures using APT and the influence of laser, poles and zone lines
Oral presentation2017, 7th European Atom Probe WorkshopPublication APT analysis of short (~200 nm) Si nanowires embedded in SiO2 and HfO2
Oral presentation2016, APT&MPublication Atom probe conditions for stoichiometric quantification of GaN and Al1 xGaxN
Oral presentation2017, 21st International Conference on Secondary Ion Mass spectrometry - SIMSPublication Atom probe tomography analysis of SiGe fins embedded in SiO2: facts and artefacts
Journal article2017, Ultramicroscopy, 179, p.100-107Publication Atom probe tomography for advanced semiconductor technology research
Meeting abstract2017, E-MRS Spring Meeting Symposium S: Analytical Techniques for Precise Characterization of Nano Materials, 22/05/2017, p.S10 - P.7Publication Challenges for APT in advanced semiconductor technology research
Meeting abstract2016, Atom Probe Tomography & Microscopy - APT&M, 12/06/2016Publication Emitter shape evolution during field evaporation and its impact on the reconstructed data of SiGe fins embedded in SiO2
Meeting abstract2016, APT&M, 12/06/2016Publication Low-frequency noise measurements for electromigration characterization in BEOL interconnects
Proceedings paper2019, 2019 IEEE International Integrated Reliability Workshop (IIRW), 13/10/2019, p.1-9Publication Non stoichiometric atom emission from bulk InP under green and UV laser illumination
Proceedings paper2016, European Atom Probe Tomography Workshop, 20/09/2016Publication (Non-hemispherical) apex shape formation and (non-uniform) apex temperature distribution during laser-assisted atomprobe tomography of semiconductors
Proceedings paper2016, Atom Probe Tomography & Microscopy, 12/06/2016Publication Potential sources of inaccuracy for the composition quantification of InGaAs and InAlAs
Oral presentation2017, 7th European Atom Probe WorkshopPublication Quantitative compositional analysis of compound semiconductors by atom probe tomography
Meeting abstract2018, Atom Probe Tomography and Microscopy - APT&M, 10/06/2018Publication Resolving the 3D boron distribution in vertical Si nanowires using atom probe tomography
Meeting abstract2017, E-MRS Spring Meeting Symposium P: Silicon and Silicon Nanostructures, 22/05/2017, p.P 8.3Publication Study of the enhanced electromigration performance of Cu(Mn) by low-frequency noise measurements and atom probe tomography
Journal article2017, Applied Physics Letters, (111) 8, p.83105Publication Towards accurate composition analysis of GaN and AlGaN using Atom Probe Tomography
Journal article2018, Journal of Vacuum Science and Technology B, (36) 3, p.03F130