Browsing by Author "Bauer, Matthias"
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Publication First electrical demonstration of DRAM compatible Ni silicides
Oral presentation2009, 18th Workshop Materials for Advanced Metallization - MAMPublication Ge deep sub-micron HiK/MG pFET with superior drive compared to Si HiK/MG state-of-the-art reference
Journal article2007-01, Semiconductor Science and Technology, (22) 1, p.S221-S226Publication High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Proceedings paper2012, SiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices, 7/10/2012, p.339-348Publication High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Meeting abstract2012-09, 222nd ECS Meeting, Pacific RIM Meeting on Electrochemical and Solid-State Science, 7/10/2012, p.3137Publication Leakage current study of Si1-xCx embedded source/drain junctions
Journal article2008, Applied Surface Science, (254) 19, p.6140-6143Publication Maximization of active As doping (selective) epitaxial Si and SiGe layers
Proceedings paper2004-10, SiGe: Materials, Processing, and Devices. Proceedings of the 1st International Symposium, 3/10/2004, p.1123-1133Publication Orientation dependence of Si1-xCx:P growth and the impact on FinFET structues
Meeting abstract2012, 222nd ECS Meeting, Pacific RIM Meeting on Electrochemical and Solid-State Science, 7/10/2012, p.3160Publication Orientation dependence of Si1-xCx:P growth and the impact on FiNFET structures
Proceedings paper2012-10, SiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices, 7/10/2012, p.491-497Publication SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
Proceedings paper2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 12/10/2008, p.1001-1013Publication Strain enhanced NMOS using in situ doped embedded Si1-xCx S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process
Journal article2008-06, IEEE Electron Device Letters, (29) 11, p.1206-1208Publication Strain enhanced nMOS using in-situ doped embedded Si:C S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process
Proceedings paper2008, 4th International SiGe Technology and Device Meeting, 11/05/2008