Browsing by Author "Boeykens, Steven"

AlGaN/GaN HEMT : when MOVPE meets the device challenge

AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

AlGaN/GaN HEMT: the growth challenge

ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT

Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure

Correlation of transport and structural properties in AlGaN/GaN HEMT: Strain modification by means of AlN interlayers

Crack-free GaN Grown on Si(111) by MOVPE by introducing Step-Graded AlGaN Buffer Layers

Deep defects in GaN/AlGaN/SiC heterostructures

High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers

High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation

Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 layer

Improvement of ohmic contacts on AlGaN/GaN HEMT's by using in-situ Si3N4 passivation layer

Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

MOVPE AlGaN/AlN/GaN HEMT with in-situ passivation

Surface stabilization for higher performance AlGaN/GaN HEMT with in-situ MOVPE SiN