Browsing by Author "Boschke, Roman"
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Publication Bidirectional NPN ESD protection in silicon photonics technology
;Boschke, Roman; ; ;Scholz, Mirko; Meeting abstract2016, International Reliability Physics Symposium - IRPS, 17/04/2016, p.1-7Publication Challenges for ESD solutions in germanium-based technologies
Meeting abstract2016, International ESD Workshop - IEW, 16/05/2016, p.C4Publication Concise analytical expression for Wunsch-Bell 1-D pulsed heating and applications in ESD using TLP
Proceedings paper2019, 2019 International Reliability Physics Symposium - IRPS, 31/03/2019, p.1-2Publication Defect characterization after ESD stress: merging TLP and Pulsed-IV techniques
Meeting abstract2015, 9th International Electrostatic Discharge Workshop - IEW, 4/05/2015Publication Demonstration of sufficient BTI reliability for a 14-nm FinFET 1.8V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel
Proceedings paper2017, IEEE International Reliability Physics symposium - IRPS, 1/04/2017, p.FA-5.1-FA-5.4Publication ESD ballasting of Ge Finfet ggNMOS devices
Proceedings paper2017, International Reliability Physics Symposium - IRPS, 2/04/2017, p.3F-3.1-3F-3.6Publication ESD Challenges in sub-10nm CMOS technologies
Proceedings paper2016, Taiwan ESD and Reliability Conference, 31/10/2016Publication ESD characterization of a-IGZO TFTs on Si and foil substrates
Proceedings paper2017, 47th European Solid-State Device Research Conference - ESSDERC, 11/09/2017, p.276-279Publication ESD characterization of gate-all-around (GAA) Si nanowire devices
; ; ; ; ;Scholz, MirkoBoschke, RomanProceedings paper2015, IEEE International Electron Devices Meeting - IEDM, 7/12/2015, p.362-365Publication ESD characterization of germanium ESD devices
Proceedings paper2014-09, EOS/ESD Symposium Proceedings, 9/07/2014, p.68-76Publication ESD characterization of germanium FinFET diodes and ggMOS
Meeting abstract2015, EOS/ESD Symposium, 27/09/2015Publication ESD characterization of planar InGaAs devices
Proceedings paper2015, IEEE International Reliability Physics Symposium - IRPS, 19/04/2015, p.3f.1Publication ESD diodes in Bulk Si gate-all-around vertically stacked horizontal nanowire technology
Proceedings paper2016, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.890-893Publication ESD protection design in a-IGZO TFT technologies
Proceedings paper2016-09, 38th Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD, 11/09/2016, p.1-7Publication ESD protection diodes in optical interposer technology
Proceedings paper2015, International Conference on IC Design and Technology - ICICDT, 1/06/2015, p.1-4Publication Gated and STI defined ESD diodes in advanced bulk FinFET technologies
Proceedings paper2014, 2014 IEEE International Electron Devices Meeting - IEDM, 15/12/2014, p.514-517Publication Impact of local interconnects on ESD design
Proceedings paper2015-06, International Conference on IC Design and Technology - ICICDT, 1/06/2015, p.1-4Publication Impacts of process options on ESD device characteristics in sub-20nm bulk FinFET technology nodes
Meeting abstract2014-12, IEEE International Electron Devices Meeting - IEDM, 15/12/2014, p.514-517Publication Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate
Proceedings paper2014, IEEE International Reliability Physics Symposium - IRPS, 1/06/2014, p.4C.2Publication Latchup in bulk finFET technology
Proceedings paper2017, IEEE International Reliability Physics Symposium - IRPS, 1/04/2017, p.EL-1.1-EL-1.3