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Browsing by Author "Boschke, Roman"

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    Bidirectional NPN ESD protection in silicon photonics technology

    Boschke, Roman
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    Chen, Shih-Hung  
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    Hellings, Geert  
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    Scholz, Mirko
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    De Heyn, Vincent  
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    Verheyen, Peter  
    Meeting abstract
    2016, International Reliability Physics Symposium - IRPS, 17/04/2016, p.1-7
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    Challenges for ESD solutions in germanium-based technologies

    Boschke, Roman
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    Hellings, Geert  
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    Chen, Shih-Hung  
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    Scholz, Mirko
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    Linten, Dimitri  
    Meeting abstract
    2016, International ESD Workshop - IEW, 16/05/2016, p.C4
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    Concise analytical expression for Wunsch-Bell 1-D pulsed heating and applications in ESD using TLP

    Hellings, Geert  
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    Roussel, Philippe  
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    Wang, Nian
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    Boschke, Roman
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    Chen, Shih-Hung  
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    Simicic, Marko  
    Proceedings paper
    2019, 2019 International Reliability Physics Symposium - IRPS, 31/03/2019, p.1-2
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    Defect characterization after ESD stress: merging TLP and Pulsed-IV techniques

    Linten, Dimitri  
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    Ji, Zhigang
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    Boschke, Roman
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    Hellings, Geert  
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    Chen, Shih-Hung  
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    Scholz, Mirko
    Meeting abstract
    2015, 9th International Electrostatic Discharge Workshop - IEW, 4/05/2015
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    Demonstration of sufficient BTI reliability for a 14-nm FinFET 1.8V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel

    Hellings, Geert  
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    Subirats, Alexandre
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    Franco, Jacopo  
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    Schram, Tom  
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    Ragnarsson, Lars-Ake  
    Proceedings paper
    2017, IEEE International Reliability Physics symposium - IRPS, 1/04/2017, p.FA-5.1-FA-5.4
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    ESD ballasting of Ge Finfet ggNMOS devices

    Boschke, Roman
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    Chen, Shih-Hung  
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    Scholz, Mirko
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    Hellings, Geert  
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    Linten, Dimitri  
    Proceedings paper
    2017, International Reliability Physics Symposium - IRPS, 2/04/2017, p.3F-3.1-3F-3.6
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    ESD Challenges in sub-10nm CMOS technologies

    Chen, Shih-Hung  
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    Linten, Dimitri  
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    Scholz, Mirko
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    Hellings, Geert  
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    Boschke, Roman
    Proceedings paper
    2016, Taiwan ESD and Reliability Conference, 31/10/2016
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    ESD characterization of a-IGZO TFTs on Si and foil substrates

    Wang, Nian
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    Chen, Shih-Hung  
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    Hellings, Geert  
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    Myny, Kris  
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    Steudel, Soeren
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    Scholz, Mirko
    Proceedings paper
    2017, 47th European Solid-State Device Research Conference - ESSDERC, 11/09/2017, p.276-279
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    ESD characterization of gate-all-around (GAA) Si nanowire devices

    Chen, Shih-Hung  
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    Hellings, Geert  
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    Linten, Dimitri  
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    Veloso, Anabela  
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    Scholz, Mirko
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    Boschke, Roman
    Proceedings paper
    2015, IEEE International Electron Devices Meeting - IEDM, 7/12/2015, p.362-365
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    ESD characterization of germanium ESD devices

    Boschke, Roman
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    Linten, Dimitri  
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    Hellings, Geert  
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    Chen, Shih-Hung  
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    Scholz, Mirko
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    Mitard, Jerome  
    Proceedings paper
    2014-09, EOS/ESD Symposium Proceedings, 9/07/2014, p.68-76
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    ESD characterization of germanium FinFET diodes and ggMOS

    Boschke, Roman
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    Linten, Dimitri  
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    Chen, Shih-Hung  
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    Scholz, Mirko
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    Hellings, Geert  
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    Mitard, Jerome  
    Meeting abstract
    2015, EOS/ESD Symposium, 27/09/2015
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    ESD characterization of planar InGaAs devices

    Ji, Zhigang
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    Linten, Dimitri  
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    Boschke, Roman
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    Hellings, Geert  
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    Chen, Shih-Hung  
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    Alian, AliReza  
    Proceedings paper
    2015, IEEE International Reliability Physics Symposium - IRPS, 19/04/2015, p.3f.1
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    ESD diodes in Bulk Si gate-all-around vertically stacked horizontal nanowire technology

    Chen, Shih-Hung  
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    Hellings, Geert  
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    Scholz, Mirko
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    Linten, Dimitri  
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    Mertens, Hans  
    Proceedings paper
    2016, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.890-893
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    ESD protection design in a-IGZO TFT technologies

    Scholz, Mirko
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    Steudel, Soeren
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    Myny, Kris  
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    Chen, Shih-Hung  
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    Boschke, Roman
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    Hellings, Geert  
    Proceedings paper
    2016-09, 38th Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD, 11/09/2016, p.1-7
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    ESD protection diodes in optical interposer technology

    Boschke, Roman
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    Groeseneken, Guido  
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    Scholz, Mirko
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    Chen, Shih-Hung  
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    Hellings, Geert  
    Proceedings paper
    2015, International Conference on IC Design and Technology - ICICDT, 1/06/2015, p.1-4
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    Gated and STI defined ESD diodes in advanced bulk FinFET technologies

    Chen, Shih-Hung  
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    Linten, Dimitri  
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    Lee, J.-W.
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    Scholz, Mirko
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    Hellings, Geert  
    Proceedings paper
    2014, 2014 IEEE International Electron Devices Meeting - IEDM, 15/12/2014, p.514-517
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    Impact of local interconnects on ESD design

    Scholz, Mirko
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    Chen, Shih-Hung  
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    Hellings, Geert  
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    Linten, Dimitri  
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    Boschke, Roman
    Proceedings paper
    2015-06, International Conference on IC Design and Technology - ICICDT, 1/06/2015, p.1-4
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    Impacts of process options on ESD device characteristics in sub-20nm bulk FinFET technology nodes

    Chen, Shih-Hung  
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    Lee, Jam-Wem
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    Linten, Dimitri  
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    Scholz, Mirko
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    Song, Ming-Hsiang
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    Hellings, Geert  
    Meeting abstract
    2014-12, IEEE International Electron Devices Meeting - IEDM, 15/12/2014, p.514-517
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    Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate

    Chen, Shih-Hung  
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    Linten, Dimitri  
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    Scholz, Mirko
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    Hellings, Geert  
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    Boschke, Roman
    Proceedings paper
    2014, IEEE International Reliability Physics Symposium - IRPS, 1/06/2014, p.4C.2
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    Latchup in bulk finFET technology

    Dai, Chia Tsen
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    Chen, Shih-Hung  
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    Linten, Dimitri  
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    Scholz, Mirko
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    Hellings, Geert  
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    Boschke, Roman
    Proceedings paper
    2017, IEEE International Reliability Physics Symposium - IRPS, 1/04/2017, p.EL-1.1-EL-1.3
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