Browsing by Author "Buca, Dan"
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Publication Benchmarking Ge1-xSnx CVD Epitaxy using GeH4 and Ge2H6
Meeting abstract2016-11, JSPS - FZ-Jülich Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", 24/11/2016, p.20-21Publication Epitaxial GeSn: impact of process conditions on material quality
Meeting abstract2018-05, Joint ISTDM/ICSI Conference, 27/05/2018, p.195-196Publication Epitaxial GeSn: Impact of process conditions on material quality
; ; Publication Epitaxial GeSn: Impact of process conditions on material quality
; ; Publication Fabrication, characterization and analysis of Ge/GeSn heterojunction p-type tunnel transistors
Publication Fabrication, doping and characterization of strained silicon on SiO2 by ion beam techniques
Oral presentation2008, 16th International Conference on Ion Beam Modifications of MaterialsPublication Ge epitaxial growth in view of optical device applications
Meeting abstract2016, 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically, 11/01/2016Publication Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(110) and Si(110)
Meeting abstract2010, 17th International Conference on Ion Beam Modification of Materials - IBMM, 22/08/2010Publication Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs for low voltage logic
Publication Strain relaxation of SiGe/Si by He implantation: controlling dislocation sources at He precipitates
Publication Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources
Publication The role of internal dislocation sources for the strain ralaxation of pseudomorphic SiGe/Si structures
Publication The use of ion implantation of strained silicon on SiO2 for nanoelectronic devices