Browsing by Author "Buhler, Rudolf"
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Publication Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors
Meeting abstract2014, E-MRS Spring Meeting Symposium X: Materials Research for Group IV Semiconductors, 16/05/2014Publication Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors
Journal article2014, Physica Status Solidi C, (11) 11_12, p.1578-1582Publication Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
Journal article2015, Solid-State Electronics, 103, p.209-215Publication Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs
Proceedings paper2013, Advanced Semiconductor-on-Insulator Technology and Related Physics, 12/05/2013, p.187-192Publication Strain characterization and simulation for MOSFETs with embedded source/drain stressors
Proceedings paper2014-04, SEMINATEC, 24/04/2014Publication TCAD strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs
Journal article2015, IEEE Transactions on Electron Devices, (62) 4, p.1079-1084