Browsing by Author "Chiappe, Daniele"

2D materials: roadmap to CMOS integration

Advanced semiconductor devices for future CMOS technologies

Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2

Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation

Atomic layer processing of 2D materials for beyond CMOS applications

BEOL compatible WS2 transistors fully fabricated in a 300 mm pilot line

Bringing 2D material integration from the lab to the fab

Challenges of large area integration of 2D materials in CMOS line

Characterization of grain boundaries and impact of plasma-induced patterned in 2D materials

Controlled sulfurization process for the synthesis of large area MoS2 films and MoS2-WS2 heterostructures

Demonstration of direction dependent conduction through MoS2 films prepared by tunable mass transport fabrication

Dielectric properties of spin-on metal oxides and their applications for 2D semiconductor devices

Direct and indirect optical transitions in bulk and atomically thin MoS2 studied by photoreflectance and photoacoustic spectroscopy

Dry cleaning and doping of MX2 for contact engineering

Effects of buried grain boundaries in multilayer MoS2

Effects of grain boundaries on the electronic properties of MoS2 layers

Electrical atomic force microscopy for 2D transition metal dichalcogenide materials

Growth of multilayer transition-metal dichalcogenide layers by high temperature sulfurization in H2S

Heterogeneous nano- to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics

Improving MOCVD MoS2 electrical performance: reducing ambient exposure