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Browsing by Author "Cuypers, Daniel"

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    Amorphous gadolinium aluminate as a dielectric and sulfur for indium phosphide passivation

    van Dorp, Dennis  
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    Nyns, Laura  
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    Cuypers, Daniel
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    Ivanov, Tsvetan  
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    Brizzi, Simone
    Journal article
    2019, ACS Applied Electronic Materials, (1) 11, p.2190-2201
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    Cleaning aspects of novel materials after CMP

    Vos, Rita  
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    Wada, M.
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    Arnauts, Sophia  
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    Takahashi, H.
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    Cuypers, Daniel
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    Struyf, Herbert  
    Proceedings paper
    2011, CMP and Post-CMP Cleaning, 14/03/2011, p.671-676
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    Cleaning of III-V materials: surface chemistry considerations

    van Dorp, Dennis  
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    Cuypers, Daniel
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    Arnauts, Sophia  
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    Mertens, Paul  
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    De Gendt, Stefan  
    Proceedings paper
    2013, Ultra Clean Processing of Semiconductor Surfaces XI - UCPSS, 17/09/2012, p.98-99
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    Etching of III-V materials determined by ICP-MS with sub-nanometer precision

    Rip, Jens  
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    Cuypers, Daniel
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    Arnauts, Sophia  
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    Holsteyns, Frank  
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    van Dorp, Dennis  
    ;
    De Gendt, Stefan  
    Journal article
    2014, ECS Journal of Solid State Science and Technology, (3) 1, p.N3064-N3068
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    In situ studies of Al2O3 ALD growth and self-cleaning on III-V surfaces by STM and XPS

    Rodriguez, Leonard
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    De Clercq, Astrid
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    Tallarida, Massimo
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    Cuypers, Daniel
    Oral presentation
    2012, AVS 59th International Symposium & Exhibition
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    In situ studies of Al2O3 ALD growth and self-cleaning on III-V surfaces by STM and XPS

    Rodriguez, Leonard
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    De Clercq, Astrid
    ;
    Tallarida, Massimo
    ;
    Cuypers, Daniel
    Meeting abstract
    2012, AVS 59th International Symposium & Exhibition, 29/10/2012
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    In-situ studies of the chemistry of trimethyl-aluminum on III-V semiconductor surfaces

    Adelmann, Christoph  
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    Tallarida, Massimo
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    Cuypers, Daniel
    ;
    Rodriguez, Leonard
    Meeting abstract
    2012, 39th Conference on the Physics and Chemistry of Surfaces and Interfaces - PCSI, 22/01/2012
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    Interface chemistry of Al2O3/III-V upon atomic layer deposition

    Tallarida, Massimo
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    Adelmann, Christoph  
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    Cuypers, Daniel
    ;
    Rodriguez, Leonard
    ;
    Lin, Dennis  
    Oral presentation
    2012, E-MRS Spring Meeting Symposium M: More than Moore
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    Metal-insulator transition in ALD VO2 ultrathin films and nanoparticles: morphological control

    Peter, Antony  
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    Martens, Koen  
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    Rampelberg, Geert
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    Toeller, Michael
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    Ablett, James
    Journal article
    2015, Advanced Functional Materials, (25) 5, p.679-686
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    Nanoscale etching and reoxidation of InAs

    van Dorp, Dennis  
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    Arnauts, Sophia  
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    Cuypers, Daniel
    ;
    Rip, Jens  
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    Holsteyns, Frank  
    ;
    De Gendt, Stefan  
    Proceedings paper
    2014, Ultra Clean Processing of Semiconductor Surfaces XII - UCPSS, 21/09/2014, p.56-58
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    Nanoscale etching of III-V semiconductors in acidic H2O2 solutions

    van Dorp, Dennis  
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    Arnauts, Sophia  
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    Cuypers, Daniel
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    Rip, Jens  
    ;
    Holsteyns, Frank  
    ;
    De Gendt, Stefan  
    Meeting abstract
    2013, 224th ECS Fall Meeting, 28/10/2013, p.2130
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    Nanoscale etching of In0.53Ga0.47As for advanced CMOS processing

    van Dorp, Dennis  
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    Arnauts, Sophia  
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    Cuypers, Daniel
    ;
    Rip, Jens  
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    Holsteyns, Frank  
    ;
    De Gendt, Stefan  
    Journal article
    2014, ECS Journal of Solid State Science and Technology, (3) 6, p.P179-P184
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    Sacrificial self-assembled monolayers for the passivation of GaAs (100) surfaces and interfaces

    Cuypers, Daniel
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    Fleischmann, Claudia  
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    van Dorp, Dennis  
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    Brizzi, Simone
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    Tallarida, Massimo
    Journal article
    2016, Chemistry of Materials, (28) 16, p.5689-5701
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    Selective wet removal of the SiN contact etch stop layer prior to S/D contact formation

    Pacco, Antoine  
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    Holsteyns, Frank  
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    Schaekers, Marc  
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    Everaert, Jean-Luc
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    Dictus, Dries  
    Proceedings paper
    2018, The Surface Preparation and Cleaning Conference - SPCC, 9/04/2018
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    Study of InP surfaces after wet chemical treatments

    Cuypers, Daniel
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    van Dorp, Dennis  
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    Tallarida, Massimo
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    Brizzi, Simone
    ;
    Conard, Thierry  
    Meeting abstract
    2013, 224th ECS Fall Meeting, 27/10/2013, p.2132
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    Study of InP surfaces after wet chemical treatments

    Cuypers, Daniel
    ;
    van Dorp, Dennis  
    ;
    Tallarida, Massimo
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    Brizzi, Simone
    ;
    Conard, Thierry  
    Journal article
    2014, ECS Journal of Solid State Science and Technology, (3) 1, p.N3016-N3022
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    Study of InP surfaces after wet chemical treatments

    Cuypers, Daniel
    ;
    van Dorp, Dennis  
    ;
    Tallarida, Massimo
    ;
    Brizzi, Simone
    ;
    Rodriguez, Leonard
    Proceedings paper
    2013, Semiconductor Cleaning Science and Technology 13, 27/10/2013, p.297-303
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    Study of the etching mechanism of heavily doped Si in HF

    Valckx, Nick
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    Cuypers, Daniel
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    Vos, Rita  
    ;
    Philipsen, Harold  
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    Rip, Jens  
    ;
    Doumen, Geert  
    Meeting abstract
    2010, 10th International Symposium on Ultra-Clean Processing of Semiconductor Devices - UCPSS, 20/09/2010, p.158-159
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    Study of the etching mechanisme of heavily n type doped Si in HF solutions

    Cuypers, Daniel
    Oral presentation
    2010, Vlaams Jongeren congres voor Chemie - VJC
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    Surface chemistry and interface formation during the atomic layer deposition of alumina from trimethyl aluminum and water on indium phosphide

    Adelmann, Christoph  
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    Cuypers, Daniel
    ;
    Tallarida, Massimo
    ;
    Rodriguez, Leonard
    Journal article
    2013, Chemistry of Materials, (25) 7, p.1078-1091
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