Browsing by Author "Cuypers, Daniel"
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Publication Amorphous gadolinium aluminate as a dielectric and sulfur for indium phosphide passivation
Journal article2019, ACS Applied Electronic Materials, (1) 11, p.2190-2201Publication Cleaning aspects of novel materials after CMP
Proceedings paper2011, CMP and Post-CMP Cleaning, 14/03/2011, p.671-676Publication Cleaning of III-V materials: surface chemistry considerations
Proceedings paper2013, Ultra Clean Processing of Semiconductor Surfaces XI - UCPSS, 17/09/2012, p.98-99Publication Etching of III-V materials determined by ICP-MS with sub-nanometer precision
; ;Cuypers, Daniel; ; ; Journal article2014, ECS Journal of Solid State Science and Technology, (3) 1, p.N3064-N3068Publication In situ studies of Al2O3 ALD growth and self-cleaning on III-V surfaces by STM and XPS
;Rodriguez, Leonard ;De Clercq, Astrid ;Tallarida, MassimoCuypers, DanielOral presentation2012, AVS 59th International Symposium & ExhibitionPublication In situ studies of Al2O3 ALD growth and self-cleaning on III-V surfaces by STM and XPS
;Rodriguez, Leonard ;De Clercq, Astrid ;Tallarida, MassimoCuypers, DanielMeeting abstract2012, AVS 59th International Symposium & Exhibition, 29/10/2012Publication In-situ studies of the chemistry of trimethyl-aluminum on III-V semiconductor surfaces
Meeting abstract2012, 39th Conference on the Physics and Chemistry of Surfaces and Interfaces - PCSI, 22/01/2012Publication Interface chemistry of Al2O3/III-V upon atomic layer deposition
Oral presentation2012, E-MRS Spring Meeting Symposium M: More than MoorePublication Metal-insulator transition in ALD VO2 ultrathin films and nanoparticles: morphological control
Journal article2015, Advanced Functional Materials, (25) 5, p.679-686Publication Nanoscale etching and reoxidation of InAs
; ; ;Cuypers, Daniel; ; Proceedings paper2014, Ultra Clean Processing of Semiconductor Surfaces XII - UCPSS, 21/09/2014, p.56-58Publication Nanoscale etching of III-V semiconductors in acidic H2O2 solutions
; ; ;Cuypers, Daniel; ; Meeting abstract2013, 224th ECS Fall Meeting, 28/10/2013, p.2130Publication Nanoscale etching of In0.53Ga0.47As for advanced CMOS processing
; ; ;Cuypers, Daniel; ; Journal article2014, ECS Journal of Solid State Science and Technology, (3) 6, p.P179-P184Publication Sacrificial self-assembled monolayers for the passivation of GaAs (100) surfaces and interfaces
Journal article2016, Chemistry of Materials, (28) 16, p.5689-5701Publication Selective wet removal of the SiN contact etch stop layer prior to S/D contact formation
Proceedings paper2018, The Surface Preparation and Cleaning Conference - SPCC, 9/04/2018Publication Study of InP surfaces after wet chemical treatments
Meeting abstract2013, 224th ECS Fall Meeting, 27/10/2013, p.2132Publication Study of InP surfaces after wet chemical treatments
Journal article2014, ECS Journal of Solid State Science and Technology, (3) 1, p.N3016-N3022Publication Study of InP surfaces after wet chemical treatments
Proceedings paper2013, Semiconductor Cleaning Science and Technology 13, 27/10/2013, p.297-303Publication Study of the etching mechanism of heavily doped Si in HF
Meeting abstract2010, 10th International Symposium on Ultra-Clean Processing of Semiconductor Devices - UCPSS, 20/09/2010, p.158-159Publication Study of the etching mechanisme of heavily n type doped Si in HF solutions
Cuypers, DanielOral presentation2010, Vlaams Jongeren congres voor Chemie - VJCPublication Surface chemistry and interface formation during the atomic layer deposition of alumina from trimethyl aluminum and water on indium phosphide
Journal article2013, Chemistry of Materials, (25) 7, p.1078-1091