Browsing by Author "De Santi, C."
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Publication Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
;Modolo, N. ;Fregolent, M. ;Masin, F. ;Benato, A. ;Bettini, A. ;Buffolo, M. ;De Santi, C.Journal article2022, MICROELECTRONICS RELIABILITY, (138) November, p.Art. 120560BPublication Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices
Journal article2022, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 8, p.4432-4437Publication High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
Proceedings paper2023, 61st IEEE International Reliability Physics Symposium (IRPS), MAR 26-30, 2023Publication Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Journal article2022, MICROELECTRONICS RELIABILITY, (138) November, p.Art. 114620Publication Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
;Favero, D. ;De Santi, C. ;Mukherjee, K.; ; ; Proceedings paper2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022Publication Study and characterization of GaN MOS capacitors: Planar vs trench topographies
Journal article2022, APPLIED PHYSICS LETTERS, (120) 14, p.143501