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Browsing by Author "De Santi, C."

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    Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

    Modolo, N.
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    Fregolent, M.
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    Masin, F.
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    Benato, A.
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    Bettini, A.
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    Buffolo, M.
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    De Santi, C.
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    Borga, Matteo  
    Journal article
    2022, MICROELECTRONICS RELIABILITY, (138) November, p.Art. 120560B
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    Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

    Modolo, N.
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    De Santi, C.
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    Baratella, Giulio  
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    Bettini, A.
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    Borga, Matteo  
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    Posthuma, Niels  
    Journal article
    2022, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 8, p.4432-4437
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    High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps

    Favero, D.
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    Cavaliere, A.
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    De Santi, C.
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    Borga, Matteo  
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    Filho Goncalez, Walter  
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    Geens, Karen  
    Proceedings paper
    2023, 61st IEEE International Reliability Physics Symposium (IRPS), MAR 26-30, 2023
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    Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

    Favero, D.
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    De Santi, C.
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    Mukherjee, K.
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    Borga, Matteo  
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    Geens, Karen  
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    Chatterjee, Urmimala
    Journal article
    2022, MICROELECTRONICS RELIABILITY, (138) November, p.Art. 114620
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    Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

    Favero, D.
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    De Santi, C.
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    Mukherjee, K.
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    Geens, Karen  
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    Borga, Matteo  
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    Bakeroot, Benoit  
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    You, Shuzhen  
    Proceedings paper
    2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022
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    Study and characterization of GaN MOS capacitors: Planar vs trench topographies

    Mukherjee, K.
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    De Santi, C.
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    You, Shuzhen  
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    Geens, Karen  
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    Borga, Matteo  
    ;
    Decoutere, Stefaan  
    Journal article
    2022, APPLIED PHYSICS LETTERS, (120) 14, p.143501

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