Browsing by Author "Deduytsche, Davy"

ALD of ZrO2, TiO2 and ZrTiO4 thin films from novel heteroleptic precursors

Anisotropic atomic layer deposition profiles of TiO2 in hierarchical silica materials with multiple porosity

Biocompatible polymers as bi-directional diffusion barriers for hermetic encapsulation of implantable electronics

Combinatorial study of Ag-Te thin films and their application as cation supply layer in CBRAM cells

Crystallization and semiconductor-metal switching behavior of thin VO2 layers grown by atomic layer deposition

Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O2 plasma

Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Elucidating the Non-Covalent Interactions that Trigger Interdigitation in Lead-Halide Layered Hybrid Perovskites

Germanium surface passivation and atomic layer deposition of high- k dielectrics - a tutorial review on Ge-based MOS capacitors

High-performance Ge MOS capacitors by O2 plasma passivation and O2 ambient annealing

Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Molecular layer deposition of "titanicone", a titanium-based hybrid material

Quasi-2D Hybrid Perovskite Formation Using Benzothieno[3,2-b]Benzothiophene (BTBT) Ammonium Cations: Substantial Cesium Lead(II) Iodide Black Phase Stabilization

Semiconductor-metal transition in thin VO2 films deposited by ozone based atomic layer deposition

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Solution-Processed Pb(Zr,Ti)O₃ Thin Films with Strong Remnant Pockels Coefficient

Spacious and mechanically flexible mesoporous silica thin film composed of an open network of interlinked nanoslabs

Synthesis of ordered mesoporous films with accessible pores and tunable pore size

Ultralow gate leakage current density of Ge metal-oxide-semiconductor capacitor passivated by in situ N2 plasma pretreatment