Browsing by Author "Duan, M."
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Publication A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
Proceedings paper2015, VLSI Technology Symposium, 15/06/2015, p.T36-T37Publication Defect loss: a new concept for reliability of MOSFETs
Journal article2012, IEEE Electron Device Letters, (33) 4, p.480-482Publication Development of a technique for characterizing bias temperature unstability-induced device-to-device variation at SRAM-relevant conditions
Journal article2014, IEEE Transactions on Electron Devices, (61) 9, p.3081-3089Publication Energy distribution of positive charges in gate dielectric: probing technique and impacts of different defects
; Journal article2013, IEEE Transactions on Electron Devices, (60) 5, p.1745-1753Publication Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM
Publication Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM
; ; Proceedings paper2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.774-777Publication New insights into defect loss, slowdown, and device lifetime enhancement
Journal article2013, IEEE Transactions on Electron Devices, (60) 1, p.413-419Publication New insights into defect loss, slowdown, and device lifetime enhancement
Journal article2013, IEEE Transactions on Electron Devices, (60) 1, p.413-418Publication Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes
Proceedings paper2016, IEEE International Electron Devices Meeting - IEDM, 5/12/2016, p.778-781Publication Time-dependent variation: A new defect-based prediction methodology
; ; ; Proceedings paper2014, IEEE VLSI Technology Symposium, 9/06/2014, p.1-2Publication Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
; Journal article2013, Microelectronic Engineering, 109, p.43-45Publication Understanding charge traps for optimizing Si-passivated Ge nMOSFETs
Proceedings paper2016, IEEE Symposium on VLSI technology, 13/06/2016, p.32-33