Browsing by Author "Gaur, Abhinav"
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Publication 2D materials: roadmap to CMOS integration
Proceedings paper2018, IEEE Electron Devices Meeting - IEDM, 1/12/2018, p.512-515Publication A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance
Journal article2020, 2D Materials, (7) 3, p.35018Publication Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2
Journal article2019, 2D Materials, (6) 3, p.35035Publication Demonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT
; ; ; ; ; Journal article2017, Microelectronic Engineering, 178, p.145-149Publication Energy band alignment in MoS₂/HfO₂: Transfer-related artifacts and interfacial effects
Journal article2025, JOURNAL OF APPLIED PHYSICS, (137) 24, p.244304-1-244304-9Publication Impact of device scaling on the electrical properties of MoS2 field-effect transistors
Journal article2021, SCIENTIFIC REPORTS, (11) 1, p.6610Publication Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra
Journal article2021, JOURNAL OF APPLIED PHYSICS, (129) 15, p.155302Publication MoS2 functionalization with a Sub-nm thin SiO2 layer for atomic layer deposition of high-k dielectrics
Journal article2017, Chemistry of Materials, (29) 16, p.6772-6780Publication Optimizing the MOS capacitor design to study large area 2D-oxide interface
Meeting abstract2017, 48th IEEE Semiconductor Interface Specialists Conference - SISC, 6/12/2017, p.2.7Publication Scaled transistors with 2D materials from the 300mm fab
Proceedings paper2020, IEEE Silicon Nanoelectronics Workshop (SNW), JUN 13-14, 2020, p.67-68Publication Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contacted pitch and 250μA/μm drain current
Proceedings paper2019, IEEE International Electron Devices Meeting - IEDM, 7/12/2019, p.550-553Publication Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020