Repository logo Institutional repository
  • Communities & Collections
  • Scientific publicationsOpen knowledge
Search repository
High contrast
  1. Home
  2. Browse by Author

Browsing by Author "Gaur, Abhinav"

Filter results by typing the first few letters
Now showing 1 - 12 of 12
  • Results per page
  • Sort Options
  • Loading...
    Thumbnail Image
    Publication

    2D materials: roadmap to CMOS integration

    Huyghebaert, Cedric  
    ;
    Schram, Tom  
    ;
    Smets, Quentin  
    ;
    Agarwal Kumar, Tarun
    ;
    Verreck, Devin  
    Proceedings paper
    2018, IEEE Electron Devices Meeting - IEDM, 1/12/2018, p.512-515
  • Loading...
    Thumbnail Image
    Publication

    A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance

    Gaur, Abhinav  
    ;
    Agarwal, Tarun
    ;
    Asselberghs, Inge  
    ;
    Radu, Iuliana  
    ;
    Heyns, Marc  
    ;
    Lin, Dennis  
    Journal article
    2020, 2D Materials, (7) 3, p.35018
  • Loading...
    Thumbnail Image
    Publication

    Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2

    Gaur, Abhinav  
    ;
    Chiappe, Daniele
    ;
    Lin, Dennis  
    ;
    Cott, Daire  
    ;
    Asselberghs, Inge  
    ;
    Heyns, Marc  
    Journal article
    2019, 2D Materials, (6) 3, p.35035
  • Loading...
    Thumbnail Image
    Publication

    Demonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT

    Gaur, Abhinav  
    ;
    Balaji, Yashwanth  
    ;
    Lin, Dennis  
    ;
    Adelmann, Christoph  
    ;
    Van Houdt, Jan  
    ;
    Heyns, Marc  
    Journal article
    2017, Microelectronic Engineering, 178, p.145-149
  • Loading...
    Thumbnail Image
    Publication

    Energy band alignment in MoS₂/HfO₂: Transfer-related artifacts and interfacial effects

    Shlyakhov, Ilya  
    ;
    Iakoubovskii, Konstantin  
    ;
    Lin, Dennis  
    ;
    Asselberghs, Inge  
    ;
    Gaur, Abhinav  
    Journal article
    2025, JOURNAL OF APPLIED PHYSICS, (137) 24, p.244304-1-244304-9
  • Loading...
    Thumbnail Image
    Publication

    Impact of device scaling on the electrical properties of MoS2 field-effect transistors

    Arutchelvan, Goutham  
    ;
    Smets, Quentin  
    ;
    Verreck, Devin  
    ;
    Ahmed, Zubair  
    ;
    Gaur, Abhinav
    Journal article
    2021, SCIENTIFIC REPORTS, (11) 1, p.6610
  • Loading...
    Thumbnail Image
    Publication

    Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra

    Shlyakhov, Ilya  
    ;
    Iakoubovskii, K.
    ;
    Banerjee, Sreetama
    ;
    Gaur, Abhinav  
    ;
    Lin, Dennis  
    Journal article
    2021, JOURNAL OF APPLIED PHYSICS, (129) 15, p.155302
  • Loading...
    Thumbnail Image
    Publication

    MoS2 functionalization with a Sub-nm thin SiO2 layer for atomic layer deposition of high-k dielectrics

    Zhang, Haodong
    ;
    Arutchelvan, Goutham  
    ;
    Meersschaut, Johan  
    ;
    Gaur, Abhinav  
    ;
    Conard, Thierry  
    Journal article
    2017, Chemistry of Materials, (29) 16, p.6772-6780
  • Loading...
    Thumbnail Image
    Publication

    Optimizing the MOS capacitor design to study large area 2D-oxide interface

    Gaur, Abhinav  
    ;
    Lin, Dennis  
    ;
    Chiappe, Daniele
    ;
    Adelmann, Christoph  
    ;
    Van Houdt, Jan  
    ;
    Mocuta, Dan
    Meeting abstract
    2017, 48th IEEE Semiconductor Interface Specialists Conference - SISC, 6/12/2017, p.2.7
  • Loading...
    Thumbnail Image
    Publication

    Scaled transistors with 2D materials from the 300mm fab

    Asselberghs, Inge  
    ;
    Schram, Tom  
    ;
    Smets, Quentin  
    ;
    Groven, Benjamin  
    ;
    Brems, Steven  
    Proceedings paper
    2020, IEEE Silicon Nanoelectronics Workshop (SNW), JUN 13-14, 2020, p.67-68
  • Loading...
    Thumbnail Image
    Publication

    Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contacted pitch and 250μA/μm drain current

    Smets, Quentin  
    ;
    Arutchelvan, Goutham  
    ;
    Jussot, Julien  
    ;
    Verreck, Devin  
    ;
    Asselberghs, Inge  
    Proceedings paper
    2019, IEEE International Electron Devices Meeting - IEDM, 7/12/2019, p.550-553
  • Loading...
    Thumbnail Image
    Publication

    Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab

    Asselberghs, Inge  
    ;
    Smets, Quentin  
    ;
    Schram, Tom  
    ;
    Groven, Benjamin  
    ;
    Verreck, Devin  
    Proceedings paper
    2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020

Follow imec on

VimeoLinkedInFacebook

The repository

  • Contact us
  • Policy
  • About imec
Privacy statement | Cookie settings