Browsing by Author "Gelpey, J."
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Publication A comparison of spike, flash, SPER and laser annealing for 45nm CMOS
Proceedings paper2003, CMOS Front-End Materials and Process Technology, 21/04/2003, p.261-266Publication Device characteristics of ultra-shallow junctions formed by fRTP annealing
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004, p.C1.3Publication Influence of halo implant on leakage current and sheet resistance of ultra-shallow p-n junctions
;Faifer, V.N. ;Schroder, D.K. ;Current, M.I. ;Clarysse, Trudo ;Timans, P.J.Zangerle, T.Proceedings paper2007, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling, 6/05/2007, p.272-279Publication Integration of low and high temperature junction anneals for 45nm CMOS
Proceedings paper2004, Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II, 9/05/2004, p.145-156Publication Integration of ultra shallow junctions in PVD TaN nMOS transistors with flash lamp annealing
Proceedings paper2005-10, Extended Abstracts International Conference on Solid State Devices and Materials - SSDM, 13/09/2005, p.910-911Publication Leakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrology
;Faifer, V.N. ;Schroder, D.K. ;Current, M.I. ;Clarysse, Trudo ;Timans, P.J.Zangerle, T.Proceedings paper2007, Frontiers of Characterization and Metrology for Nanoelectronics: 2007 (NIST), 27/03/2007, p.246-250