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Browsing by Author "Gerardin, S."

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    A statistical approach to microdose induced degradation in FinFET devices

    Griffoni, Alessio
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    Gerardin, S.
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    Roussel, Philippe  
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    Degraeve, Robin  
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    Meneghesso, G.
    Journal article
    2009, IEEE Transactions on Nuclear Science, (56) 6_1, p.3285-3292
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    Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

    Tajalli, A.
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    Stockman, Arno  
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    Meneghini, M.
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    Mouhoubi, S.
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    Banerjee, A.
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    Gerardin, S.
    ;
    Bagatin, M.
    Proceedings paper
    2018, 30th International Symposium on Power Semiconductor Devices & ICs - ISPSD, 13/05/2018, p.92-95
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    Effects of heavy-ion strikes on fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

    Griffoni, A.
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    Gerardin, S.
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    Cester, A.
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    Paccagnella, A.
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    2007, IEEE Trans. Nuclear Science, (54) 6, p.2257-2263
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    Electrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation

    Cester, A.
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    Gerardin, S.
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    Paccagnella, A.
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    2005, IEEE Trans. Nuclear Science, (52) 6 part 1, p.2252-2258
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    Electrostatic discharge effects in fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

    Griffoni, A.
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    Tazzoli, A.
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    Gerardin, S.
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    Simoen, Eddy  
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    Claeys, Cor
    ;
    Meneghesso, G.
    Proceedings paper
    2008, 30th Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD, 7/09/2008, p.59-66
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    ESD sensitivity of 65-nm fully depleted SOI MOSFETs with different strain-inducing techniques

    Griffoni, A.
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    Tazzoli, A.
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    Gerardin, S.
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    Simoen, Eddy  
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    Claeys, Cor
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    Meneghesso, G.
    Oral presentation
    2008, 2nd International Electrostatic Discharge Workshop
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    Impact of radiation on the operation and reliability of deep submicron CMOS technologies

    Claeys, Cor
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    Put, Sofie
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    Griffoni, Alessio
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    Cester, A.
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    Gerardin, S.
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    Meneghesso, G.
    Proceedings paper
    2010, China Semiconductor Technology International Conference - CSTIC, 18/03/2010, p.39-46
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    Microdose and breakdown effects induced by heavy ions on sub 20-nm triple gate SOI FETs

    Griffoni, Alessio
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    Gerardin, S.
    ;
    Meneghesso, G.
    ;
    Paccagnella, A.
    ;
    Simoen, Eddy  
    ;
    Put, Sofie
    Journal article
    2008, IEEE Transactions on Nuclear Science, (55) 6, p.3182-3188

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