Browsing by Author "Ghibaudo, G."
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Publication An extended "Y function" method for saturation regime characterization: application to bulk Si and Ge technologies
Proceedings paper2012, International Conference on Solid State Devices and Materials - SSDM, 25/09/2012Publication Analytical modeling for the current-voltage characteristics of lightly-doped symmetric double-gate MOSFETs
Publication Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs
Journal article2011, Solid-State Electronics, (57) 1, p.31-34Publication DC and low frequency noise characterization of FINFET devices
Journal article2009, Solid-State Electronics, (53) 12, p.1263-1267Publication Direct comparison of Si/high-k and Si/SiO2 channels in advanced FD SOI MOSFETs
Proceedings paper2008, IEEE International SOI Conference Proceedings, 6/10/2008, p.25-26Publication Electrical characterization and design optimization of FinFETs with TiN/HfO2 gate stack
Publication Electrical transport characterization of nano CMOS devices with ultra-thin silicon film
Publication Experimental characterization of the subthreshold leakage current in triple-gate FinFETs
Journal article2009, Solid-State Electronics, (53) 3, p.359-363Publication Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures
Publication Static and low frequency noise characterization of FinFET devices
Proceedings paper2009, 10th International Conference on Ultimate Integration of Silicon - ULIS, 18/03/2009, p.39-42Publication Y function method applied to saturation regime: apaprent saturation mobility and saturation velocity extraction
Journal article2013, Solid-State Electronics, 85, p.12-14