Browsing by Author "Habas, Predrag"
- Results Per Page
- Sort Options
Publication A model study of the hot-carrier problem in LDD and overlapped LDD MOSFETs
Journal article1995, Microelectronic Engineering, 28, p.285-288Publication Analysis and optimisation of the hot-carrier degradation performance of 0.35μm fully overlapped LDD devices
Proceedings paper1995, 33rd Annual IEEE International Reliability Physics Conference - IRPS, 4/05/1995, p.254-259Publication Analysis of charge pumping characteristics of single interface traps
Oral presentation1997, Semiconductor Interface Specialists' Conference - SISCPublication Analytical model and qualititative analysis of the interface-trap charge pumping characteristics of MOS structure
Habas, PredragProceedings paper1997, 21st International Conference on Microelectronics - MIEL, 14/09/1997, p.605-610Publication Characterization of hot-carrier aging of a 0.35µm fully overlapped-LDD CMOS technology
Proceedings paper1995, 20th International Conference on Microelectronics. Proceedings, 12/09/1995, p.197-202Publication Detailed study of the parasitic geometric current components in charge pumping measurements: determination of relevant parameters
Oral presentation1997, Semiconductor Interface Specialists' Conference - SISCPublication Geometric current component in charge-pumping measurements
Proceedings paper1997, 21st International Conference on Microelectronics - MIEL, 14/09/1997, p.599-604Publication Optical testing of submicron-technology MOSFETs and bipolar transistors
;Pogany, D. ;Fürböck, C. ;Seliger, N. ;Habas, Predrag ;Gornik, E.; Proceedings paper1997, ESSDERC '97: Proceedings of the 27th European Solid-State Device Research Conference, 22/09/1997, p.372-375Publication Performance and reliability aspects of FOND: A new deep submicron CMOS device concept
Journal article1996, IEEE Transactions on Electron Devices, (43) 9, p.1407-1415Publication Study of the hot-carrier degradation performance of 0.35 μm fully overlapped LDD devices
Journal article1995, Microelectronic Engineering, 28, p.265-268