Browsing by Author "Hahn, Herwig"
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Publication AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates
Journal article2024, APPLIED PHYSICS LETTERS, (125) 7, p.Art. 72103Publication Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
; ; ; ; ; ; Marx, MatthiasProceedings paper2021, 2021 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech), 24/05/2021Publication Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Journal article2023, SCIENTIFIC REPORTS, (13) N/, p.Art. 15931Publication Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application
Journal article2022, APPLIED PHYSICS LETTERS, (120) 26, p.261902Publication Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Meeting abstract2019, DGKK Workshop "Epitaxy of III-V Semiconductors", 5/12/2019Publication Integration of 650 V GaN power ICs on 200 mm engineered substrates
; ; ; ; ; Journal article2020, IEEE Transactions on Semiconductor Manufacturing, (33) 4, p.534-538Publication Integration of GaN power ICs on 200 mm engineered substrates
; ; ; ; ; Proceedings paper2020, 2020 International Conference on Compound Semiconductor Manufacturing Technology, 24/05/2020, p.241-244Publication Metal-Organic Chemical Vapor Deposition Regrowth of Highly Doped n+(In)GaN Source/Drain Layers for Radio Frequency Transistors
Journal article2024, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, (221) 21, p.Art. 2400069Publication Vertical GaN devices: Process and reliability
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