imec Institutional Repository Browsing {{ collection }} by Author "Hayashi, S."

Publication

45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

Mitsuhashi, Riichirou

;

Yamamoto, Kazuhiko

;

Hayashi, S.

;

Rothschild, Aude

;

Kubicek, Stefan

Journal article

2005, Microelectronic Engineering, 80, p.7-10

Publication

Current status and addressing the challenges of Hf-based gate stack toward 45nm-LSTP application

Niwa, Masaaki

;

Mitsuhashi, Riichirou

;

Yamamoto, K.

;

Hayashi, S.

;

Harada, Yoshinao

Proceedings paper

2005-10, Extended Abstracts of the International Conference on Solid State Devices and Materials - SSDM, 13/09/2005, p.6-7

Publication

High performance n-mos FinFET by damage-free, conformal extension doping

Zschaetzsch, Gerd

;

Sasaki, Y.

;

Hayashi, S.

;

Togo, Mitsuhiro

;

Chiarella, Thomas

Proceedings paper

2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.841-844

Publication

Prospect of Hf-based gate dielectric by PVD with FUSI gate for LSTP application

Niwa, Masaaki

;

Mitsuhashi, Riichirou

;

Yamamoto, Kazuhiko

;

Hayashi, S.

;

Harada, Y.

;

Kubota, M.

Meeting abstract

2005, Meeting Abstracts 208th Meeting of the Electrochemical Society, 16/10/2005, p.516

Publication

PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application

Yamamoto, Kazuhiko

;

Kubicek, Stefan

;

Rothschild, Aude

;

Mitsuhashi, Riichirou

;

Deweerd, Wim

Journal article

2005-06, Microelectronic Engineering, 80, p.198-201

Browsing by Author "Hayashi, S."