Browsing by Author "He, Liang"
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Publication Are extended defects a show stopper for future III-V CMOS technologies?
; ; ; ; Proceedings paper2018-06, 19th International Conference on Extended Defects in Semiconductors - EDS, 24/06/2018Publication Deep traps in In0.3Ga0.7As nFinFETs, studied by generation-recombination noise
Proceedings paper2017, International Conference on Noise and 1/f Fluctuations - ICNF, 20/06/2017, p.1-4Publication Do we have to worry about extended defects in high-mobility materials?
Proceedings paper2018, China Semiconductor Technology International Conference - CSTIC, 11/03/2018Publication Gate metal and cap layer effects on Ge nMOSFETs low frequency noise behavior
Journal article2019-12, IEEE Transactions on Electron Devices, (66) 2, p.1050-1056Publication Impact of the metal gate on the oxide stack quality assessed by low-frequency noise
Proceedings paper2017, 232nd ECS Fall Meeting - Semiconductor Process Integration 10, 1/10/2017, p.69-80Publication Low frequency noise analysis of impact of metal gate Processing on the gate oxide stack quality
Journal article2018, ECS Journal of Solid State Science and Technology, (7) 3, p.Q26-Q32Publication Low frequency noise characterization of 22nm PMOS featuring with filling W gate using different precursors
; Publication RTS Noise Characterization of Trap Properties in InGaAs nFinFETs
Journal article2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 7, p.3496-3503